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参数资料
| 型号： | NTGS3130NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH SGL 20V 5.6A 6-TSOP |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 5.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 935pF @ 16V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTGS3130NT1GOSCT |
NTGS3130N
Power MOSFET
20 V, 5.6 A Single
N-Channel, TSOP-6
Features
? Leading Edge Trench Technology for Low On Resistance
? Low Gate Charge for Fast Switching
? Small Size (3 x 2.75 mm) TSOP-6 Package
? This is a Pb-Free Device
Applications
? DC-DC Converters
? Lithium Ion Battery Applications
? Load/Power Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
20 V
http://onsemi.com
R DS(on) mAX
24 m W @ 4.5 V
32 m W @ 2.5 V
N-Channel
Drain 1 2 5 6
I D Max
5.6 A
4.9 A
Rating
Drain-to-Source Voltage
Symbol
V DSS
Value
20
Unit
V
Gate-to-Source Voltage
V GS
± 8
V
Gate 3
Continuous Drain Current
(Note 1)
Power Dissipation
(Note 1)
Continuous Drain Current
(Note 2)
Steady
State
t ≤ 10 s
Steady
State
t ≤ 10 s
Steady
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
I D
P D
I D
5.6
4.1
6.2
1.1
1.4
4.2
3.0
A
W
A
Source 4
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Power Dissipation
(Note 2)
Pulsed Drain Current
State
T A = 25 ° C
t P ≤ 10 s
P D
I DM
0.6
19
W
A
1
TSOP-6
CASE 318G
STYLE 1
S9 M G
G
Operating and Storage Temperature Range
T J , T stg
-55 to
150
° C
1 2 3
Drain Drain Gate
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
1.0
260
A
° C
S9
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
THERMAL RESISTANCE RATINGS
(Note: Microdot may be in either location)
Parameter
Symbol
Max
Unit
*Date Code orientation may vary depending
upon manufacturing location.
Junction-to-Ambient - Steady State (Note 1)
110
Junction-to-Ambient - t ≤ 10 s (Note 1)
Junction-to-Ambient - Steady State (Note 2)
R q JA
90
200
° C/W
ORDERING INFORMATION
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
Device
NTGS3130NT1G
Package
TSOP-6
(Pb-Free)
Shipping ?
3000/Tape & Reel
1. Surface-mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces)
2. Surface-mounted on FR4 board using the minimum recommended pad size
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
May, 2007 - Rev. 0
1
Publication Order Number:
NTGS3130N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3136P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 |
| NTGS3136PT1G | 功能描述:MOSFET PFET TSOP6 20V/8V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3433T1 | 功能描述:MOSFET -12V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3433T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET -3.3 Amps， -12 Volts |
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