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| 型号： | NTGS3130NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH SGL 20V 5.6A 6-TSOP |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 24 毫欧 @ 5.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20.3nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 935pF @ 16V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTGS3130NT1GOSCT |
NTGS3130N
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V; I D = 250 m A
20
9.8
V
mV/ ° C
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Current
I DSS
I GSS
V GS = 0 V; V DS = 16 V,
T J = 25 ° C
V DS = 0, V GS = ± 8 V
1.0
100
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS, I D = 250 m A
0.4
0.6
1.4
V
Negative Temperature Coefficient
V GS(TH) /T J
3.4
mV/ ° C
Drain-to-Source On-Resistance
Forward Transconductance
R DS(on)
g FS
V GS = 4.5 V, I D = 5.6 A
V GS = 2.5 V, I D = 4.9 A
V DS = 10 V, I D = 5.6 A
19
25
8.2
24
32
m W
S
CHARGES, CAPACITANCE, & GATE RESISTANCE
Input Capacitance
Output Capacitance
C ISS
C OSS
V GS = 0 V,
f = 1 MHz,
935
169
Reverse Transfer Capacitance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
C RSS
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
V DS = 16 V
V GS = 0 V,
f = 1 MHz,
V DS = 10 V
V GS = 4.5 V
V DS = 16 V
I D = 5.6 A
104
965
198
110
13.2
0.60
1.5
20.3
pF
Gate-to-Drain Charge
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q GD
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 4.5 V
V DS = 5.0 V
I D = 6.2 A
4.2
11.8
0.6
1.4
2.7
18.0
nC
SWITCHING CHARACTERISTICS, V GS = 4.5 V (Note 4)
Turn-On Delay Time
t d(ON)
6.3
12.6
Rise Time
Turn-Of f Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V,
V DD = 16 V,
I D = 1 A,
R G = 3 W
7.3
21.7
9.7
13.5
35.1
17.6
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 1.0 A
T J = 25 ° C
0.7
1.2
V
Reverse Recovery Time
t RR
20.4
Charge Time
Discharge Time
Reverse Recovery Charge
t a
t b
Q RR
V GS = 0 Vdc,
dI SD /dt = 100 A/ m s,
I S = 1.0 A
8.1
11.6
8.8
ns
nC
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperature.
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