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| 型号： | NTGS3441BT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.2A 6-TSOP |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 900mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 630pF @ 10V |
| 功率 - 最大： | 700mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGS3441B
Power MOSFET
-20 V, -3.5 A, Single P-Channel, TSOP-6
Features
? Low R DS(on) in TSOP-6 Package
? 2.5 V Gate Rating
? This is a Pb-Free Device
http://onsemi.com
Applications
? Battery Switch and Load Management Applications in Portable
Equipment
? High Side Load Switch
? Portable Devices like Games and Cell Phones
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
V (BR)DSS
-20 V
R DS(on) MAX
90 m W @ -4.5 V
130 m W @ -2.5 V
P-Channel
I D MAX
-3.0 A
-2.4 A
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
-20
$ 8
Unit
V
V
1 2 5 6
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 70 ° C
I D
-3.0
-2.4
A
3
t v 5s
T A = 25 ° C
-3.5
4
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.1
W
MARKING
t v 5s
1.6
DIAGRAM
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
T A = 25 ° C
T A = 70 ° C
T A = 25 ° C
I D
P D
-2.2
-1.8
0.7
A
W
1
TSOP-6
CASE 318G
STYLE 1
1
SF M G
G
Pulsed Drain Current
t p = 10 m s
I DM
-12
A
SF = Device Code
M = Date Code
Operating Junction and Storage Temperature
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T J ,
T STG
T L
-55 to
150
260
° C
° C
G = Pb-Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
Stresses exceeding Maximum Ratings may damage the device. Maximum
6
5
4
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in
sq [2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0775 in sq).
1 2 3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS3441BT1G
Package
TSOP-6
Shipping ?
3000 / Tape & Reel
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
November, 2007 - Rev. 0
1
Publication Order Number:
NTGS3441B/D
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| NTGS3441PT1G | MOSFET P-CH 20V 1.8A 6-TSOP |
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| NTGS3443BT1G | MOSFET P-CH 20V 2.7A 6-TSOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3441P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters |
| NTGS3441P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -3.16 A, Single P-Channel TSOP-6 |
| NTGS3441PT1G | 功能描述:MOSFET PFET 20V 3.1A .1MOH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3441T1 | 功能描述:MOSFET 20V 1A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3441T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 1 Amp， 20 Volts |
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