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| 型号： | NTGS3446T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.5A 6-TSOP |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 产品目录绘图： | MOSFET 6-TSOP |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 5.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 750pF @ 10V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTGS3446T1OSCT |
NTGS3446
Power MOSFET
20 V, 5.1 A Single
N?Channel, TSOP6
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Diode Exhibits High Speed, Soft Recovery
? Avalanche Energy Specified
? I DSS Specified at Elevated Temperature
? Pb ? Free Package is Available
Applications
? Power Management in portable and battery ? powered products, i.e.
computers, printers, PCMCIA cards, cellular and cordless
? Lithium Ion Battery Applications
? Notebook PC
V (BR)DSS
20 V
http://onsemi.com
R DS(on) TYP
36 m W @ 4.5 V
N ? Channel
Drain 1 2 5 6
I D MAX
5.1 A
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Gate 3
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
V DSS
20
V
Source 4
Gate ? to ? Source Voltage
Thermal Resistance
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (t p t 10 m s)
V GS
R q JA
P d
I D
I DM
± 12
244
0.5
2.5
10
V
° C/W
W
A
A
1
TSOP ? 6
CASE 318G
STYLE 1
MARKING
DIAGRAM
446 W
1
Thermal Resistance
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (t p t 10 m s)
Thermal Resistance
Junction ? to ? Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (t p t 10 m s)
Source Current (Body Diode)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
R q JA
P d
I D
I DM
R q JA
P d
I D
I DM
I S
T J , T stg
T L
128
1.0
3.6
14
62.5
2.0
5.1
20
5.1
? 55 to
150
260
° C/W
W
A
A
° C/W
W
A
A
A
° C
° C
446 = Device Code
W = Work Week
PIN ASSIGNMENT
Drain Drain Source
6 5 4
1 2 3
Drain Drain Gate
ORDERING INFORMATION
NTGS3446T1G
3000/Tape & Reel
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Minimum FR ? 4 or G ? 10PCB, operating to steady state.
2. Mounted onto a 2 ” square FR ? 4 board (1 ” sq. 2 oz. cu. 0.06 ” thick
single ? sided), operating to steady state.
3. Mounted onto a 2 ” square FR ? 4 board (1 ” sq. 2 oz. cu. 0.06 ” thick
single ? sided), t < 5.0 seconds.
Device Package Shipping ?
NTGS3446T1 TSOP ? 6 3000/Tape & Reel
TSOP ? 6
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
January, 2006 ? Rev. 5
1
Publication Order Number:
NTGS3446/D
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PDF描述 |
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| NTGS3447PT1G | MOSFET P-CH 12V 3.4A 6-TSOP |
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| NTGS4111PT2G | MOSFET P-CH 30V 2.6A 6-TSOP |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3446T1G | 功能描述:MOSFET 20V 5.1A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3447P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -12 V, -5.3 A, Single P-Channel, TSOP-6 |
| NTGS3447PT1G | 功能描述:MOSFET P-CH 12V 3.4A 6-TSOP RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTGS3455T1 | 功能描述:MOSFET 30V 3.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3455T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET -3.5 Amps， -30 Volts |
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