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| 型号： | NTGS3455T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 30V 2.5A 6-TSOP |
| 产品变化通告： | LTB Notification 03/Jan/2008 Wire Change 08/Oct/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 100 毫欧 @ 3.5A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 13nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 480pF @ 5V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
| 其它名称： | NTGS3455T1OS |
NTGS3455T1
MOSFET
?3.5 Amps, ?30 Volts
P ? Channel TSOP ? 6
Features
http://onsemi.com
?
?
?
?
Ultra Low R DS(on)
Higher Efficiency Extending Battery Life
Miniature TSOP ? 6 Surface Mount Package
Pb ? Free Package is Available
V (BR)DSS
? 30 V
R DS(on) TYP
100 m W @ ? 10 V
P ? Channel
I D Max
? 3.5 A
Applications
? Power Management in Portable and Battery ? Powered Products, i.e.:
Cellular and Cordless Telephones, and PCMCIA Cards
DRAIN
1 2 5 6
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted.)
GATE
3
Rating
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 30
Unit
Volts
4
SOURCE
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 μ S)
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Thermal Resistance
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
V GS
R θ JA
P d
I D
I DM
P d
I D
R θ JA
P d
" 20.0
62.5
2.0
? 3.5
? 20
1.0
? 2.5
128
1.0
Volts
° C/W
Watts
Amps
Amps
Watts
Amps
° C/W
Watts
1
TSOP ? 6
CASE 318G
STYLE 1
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
6 5 4
455 M G
G
1 2 3
Drain Drain Gate
= Date Code*
Drain Current
? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 μ S)
Maximum Operating Power Dissipation
Maximum Operating Drain Current
Operating and Storage Temperature Range
I D
I DM
P d
I D
T J , T stg
? 2.5
? 14
0.5
? 1.75
? 55 to
150
Amps
Amps
Watts
Amps
° C
455 = Specific Device Code
M
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
NTGS3455T1G
3000 Tape & Reel
Maximum Lead Temperature for Soldering T L 260 ° C
Purposes for 10 Seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted onto a 2 ″ square FR ? 4 board (1 in sq, 2 oz. Cu. 0.06 ″ thick single
sided), t t 5.0 seconds.
2. Mounted onto a 2 ″ square FR ? 4 board (1 in sq, 2 oz. Cu. 0.06 ″ thick single
sided), operating to steady state.
ORDERING INFORMATION
Device Package Shipping ?
NTGS3455T1 TSOP ? 6 3000 Tape & Reel
TSOP ? 6
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2007
March, 2007 ? Rev. 3
1
Publication Order Number:
NTGS3455T1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3455T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET -3.5 Amps， -30 Volts |
| NTGS3455T1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:MOSFET -3.5 Amps, -30 Volts |
| NTGS3455T1G | 功能描述:MOSFET 30V 3.5A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS4111P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET (-30 V, -4.7 A, Single P-Channel, TSOP-6) |
| NTGS4111PT1 | 功能描述:MOSFET -30V -4.7A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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