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| 型号： | NTGS4141NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3.5A 6-TSOP |
| 产品目录绘图： | MOSFET 6-TSOP |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 560pF @ 24V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTGS4141NT1GOSDKR |
NTGS4141N
Power MOSFET
30 V, 7.0 A, Single N ? Channel, TSOP ? 6
Features
? Low R DS(on)
? Low Gate Charge
? Pb ? Free Package is Available
http://onsemi.com
Applications
? Load Switch
? Notebook PC
? Desktop PC
V (BR)DSS
30 V
R DS(on) TYP
21.5 m W @ 10 V
30 m W @ 4.5 V
I D MAX
7.0 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Rating Symbol
Drain ? to ? Source Voltage V DSS
Value
30
Unit
V
N ? Channel
Drain 1 2 5 6
Gate ? to ? Source Voltage
V GS
± 20
V
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
5.0
3.6
A
Gate 3
t ≤ 10 s
T A = 25 ° C
7.0
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.0
W
Source 4
1
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
Pulsed Drain Current
t ≤ 10 s
Steady T A = 25 ° C
State
T A = 85 ° C
T A = 25 ° C
t p = 10 m s, V GS =10V
I D
P D
I DM
2.0
3.5
2.5
0.5
45
A
W
A
TSOP ? 6
CASE 318G
STYLE 1
S4 = Device Code
MARKING
DIAGRAM
S4 M G
G
Pulsed Drain Current t p = 30 m s, V GS =5V
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain ? to ? Source Avalanche Energy
(V DD = 30 V, I L = 10.4 A, V GS = 10 V,
L = 1.0 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I D
T J ,
T STG
I S
EAS
T L
30
? 55 to
150
2.0
54
260
A
° C
A
mJ
° C
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
1 2 3
Drain Drain Gate
Rating
Symbol
Max
Unit
ORDERING INFORMATION
Junction ? to ? Ambient – Steady State (Note 1)
Junction ? to ? Ambient – t ≤ 10 s (Note 1)
R θ JA
R θ JA
125
62.5
° C/W
Device
NTGS4141NT1
Package
TSOP ? 6
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
NTGS4141NT1G
Junction ? to ? Ambient – Steady State (Note 2) R θ JA 248
1. Surface ? mounted on FR4 board using 1 inch sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
2. Surface ? mounted on FR4 board using the minimum recommended pad size
(Cu area = 0.0773 in sq).
TSOP ? 6
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
April, 2012 ? Rev. 5
1
Publication Order Number:
NTGS4141N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS4141NT1G-CUT TAPE | 制造商:ON 功能描述:NTGS Series N-Channel 30 V 21.5 mOhm 1 W Surface Mount Power MOSFET - TSOP-6 |
| NTGS5120P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −60 V, −2.9 A, Single P−Channel, TSOP−6 |
| NTGS5120PT1G | 功能描述:MOSFET PFET TSOP6 60V 2.5A 110mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGW | 功能描述:烙铁 Weller Cylind Tip For WMP Solder Penc RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included |
| NTH | 功能描述:烙铁 Weller Chisel Tip For WMP Solder Penc RoHS:否 制造商:Weller 产品:Soldering Stations 类型:Digital, Iron, Stand, Cleaner 瓦特:50 W 最大温度:+ 850 F 电缆类型:US Cord Included |
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