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| 型号： | NTHD2110TT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 4.5A CHIPFET |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 6.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 850mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1072pF @ 6V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHD2110T
Power MOSFET
-12 V, -6.4 A, Single P-Channel +TVS,
ChipFET t Package
Features
? Low R DS(on) MOSFET and TVS Diode ChipFET Package
? Integrated Drain Side TVS for 15 kV Contact Discharge ESD
Protection
http://onsemi.com
AND PIN A
?
?
1.8 V Gate Rating
This is a Pb-Free Device
V (BR)DSS
R DS(on) MAX
40 m W @ -4.5 V
I D MAX
Applications
? Battery Switch and Load Management Applications in Portable
Equipment
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
-12 V
53 m W @ -2.5 V
80 m W @ -1.8 V
TVS
-6.4 A
Parameter
Drain-to-Source Voltage
Symbol
V DSS
Value
-12
Unit
V
V RWM
12
V C @ MAX I PP
21.5
I PP MAX
6.2 A
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
V GS
I D
" 8
-4.5
-3.2
V
A
S
A
t ≤ 5s
T A = 25 ° C
-6.4
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.1
W
G
t ≤ 5s
2.3
Operating Junction and Storage Temperature
Storage Temperature Range
T J ,
T STG
TJ
-55 to
150
-55 to
° C
° C
D
P-Channel MOSFET
C
TVS Diode
150
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 seconds)
T L
260
° C
8
ChipFET
CASE 1206A
TVS MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
1
STYLE 6
Parameter
Peak Power Dissipation
Symbol
PPK
Value
150
Unit
W
PIN
CONNECTIONS
MARKING
DIAGRAM
8 x 20 ms Double Exponential Waveform
(Note 2)
Human Body Model (HBM)
Machine Model (MM)
IEC 61000-4-2 Specification (Contact)
ESD
16
400
30
kV
V
kV
A
D
1
2
8
7
6
C/D
D
1
2
8
7
THERMAL RESISTANCE RATINGS
D
3
D
3
6
Parameter
Symbol
Max
Unit
G
4
5
S
4
5
Junction-to-Ambient – Steady State (Note 1)
Junction-to-Ambient – t ≤ 5 s (Note 1)
Junction-to-Ambient - Steady State Min Pad
(Note 3)
R q JA
R q JA
R q JA
110
55
225
° C/W
FTZ
M
G
= Specific Device Code
= Month Code
= Pb-Free Package
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
ORDERING INFORMATION
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
Device
NTHD2110TT1G
Package
ChipFET
Shipping ?
3000/Tape & Reel
[1 oz] including traces).
2. Nonrepetitive Current Pulse per Figure 11.
3. Surface Mounted on FR4 board using 1 in sq size (Cu area = 1.127 in sq
[1 oz] included traces).
(Pb-Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
March, 2008 - Rev. 0
1
Publication Order Number:
NTHD2110T / D
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| NTHD3100C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET |
| NTHD3100CT1 | 功能描述:MOSFET 20V +3.9A/-4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3100CT1G | 功能描述:MOSFET 20V +3.9A/-4.4A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3100CT3 | 功能描述:MOSFET 20V +3.9A/-4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3100CT3G | 功能描述:MOSFET 20V +3.9A/-4.4A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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