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| 型号： | NTHD2110TT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 4.5A CHIPFET |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 6.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 850mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1072pF @ 6V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHD2110T
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
V (Br)DSS
V GS = 0 V dc , I D = -250 m A
-12
V
Zero Gate Voltage Drain Current
I DSS
V DS = -12 V,
V GS = 0 V
T J = 25 ° C
T J = 85 ° C
-1.0
-5.0
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = " 8.0 V
" 0.1
m A
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Drain-to-Source On-Resistance
V GS(th)
R DS(on)
V DS = V GS , I D = -250 m A
V GS = -4.5 V, I D = -6.4 A
-0.40
33
-0.85
40
V
m W
V GS = -2.5 V, I D = -2.0 A
V GS = -1.8 V, I D = -1.7 A
42
57
53
80
Forward Transconductance
g FS
V DS = -5.0 V, I D = -6.4 A
13.7
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C iss
1072
pF
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = -6.0 V, V GS = 0 V
f = 1.0 MHz
260
134
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = -4.5 V, V DS = -6.0 V,
I D = -6.4 A
10.5
0.6
1.3
2.8
14
nC
SWITCHING CHARACTERISTICS (Note 7)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t d(on)
t r
t d(off)
t f
V DD = -6.0 V, V GS = -4.5 V,
I D = -1.0 A, R G = 6.0 W
7.5
8.6
99.7
49.8
ns
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
V SD
I S = -1.7 A,
V GS = 0 V
T J = 25 ° C
T J = 125 ° C
-0.7
-0.6
-1.0
V
Reverse Recovery Time
Reverse Recovery Charge
t RR
Q RR
V GS = 0 V,
dI S / dt = 100 A/ m s, I S = -1.7 A
V GS = 0 V,
dI S / dt = 100 A/ m s, I S = -1.7 A
41.7
22
ns
nC
4.
5.
6.
7.
Surface Mounted on FR4 board using 1 in sq size (Cu area = 1.127 in sq [1 oz] included traces).
Surface mounted on FR4 board using the minimum recommended pad size.
Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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| NTHD3100CT1G | 功能描述:MOSFET 20V +3.9A/-4.4A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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