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| 型号： | NTHD2110TT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 12V 4.5A CHIPFET |
| 产品变化通告： | Product Obsolescence 19/Dec/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 12V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 40 毫欧 @ 6.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 850mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 14nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1072pF @ 6V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHD2110T
PACKAGE DIMENSIONS
ChipFET t
CASE 1206A-03
ISSUE J
D
q
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
H E
8
1
7
2
6
3
5
4
E
L
5
4
6
3
7
2
8
1
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED 0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET IN HORIZONTAL
AND VERTICAL SHALL NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP AND BOTTOM LEAD
SURFACE.
MILLIMETERS
INCHES
DIM
MIN
NOM MAX
MIN
NOM
MAX
e1
e
b
c
A
b
c
1.00
0.25
0.10
1.05 1.10
0.30 0.35
0.15 0.20
0.039
0.010
0.004
0.041
0.012
0.006
0.043
0.014
0.008
D
E
2.95
1.55
3.05 3.10
1.65 1.70
0.116
0.061
0.120
0.065
0.122
0.067
e
0.65 BSC
0.025 BSC
A
e1
0.55 BSC
0.022 BSC
L
0.28 0.35 0.42
0.011
0.014
0.017
0.05 (0.002)
H E
q
1.80 1.90 2.00
5 ° NOM
0.071
0.075
5 ° NOM
0.079
STYLE 6:
PIN 1. ANODE
SOLDERING FOOTPRINT*
2. DRAIN
3. DRAIN
4. GATE
2.36 2
0.093
1
2.03 2
0.08
8X
5. SOURCE
6. DRAIN
7. DRAIN
8. CATHODE / DRAIN
0.63 5
0.025
PITCH
8X
0.45 7
0.018
0.66
0.026
mm
inches
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ChipFET is a trademark of Vishay Siliconix
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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http://onsemi.com
7
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Order Literature : http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
NTHD2110T/D
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| NTHD3100C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET |
| NTHD3100CT1 | 功能描述:MOSFET 20V +3.9A/-4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3100CT1G | 功能描述:MOSFET 20V +3.9A/-4.4A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3100CT3 | 功能描述:MOSFET 20V +3.9A/-4.4A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3100CT3G | 功能描述:MOSFET 20V +3.9A/-4.4A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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