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参数资料
| 型号： | NTHD3133PFT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH SGL 20V CHIPFET |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 680pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHD3133PF
Power MOSFET and
Schottky Diode
-20 V, FETKY t , P-Channel, -4.4 A, with
3.7 A Schottky Barrier Diode, ChipFET t
Features
? Leadless SMD Package Featuring a MOSFET and Schottky Diode
? 40% Smaller than TSOP-6 Package
? Leadless SMD Package Provides Great Thermal Characteristics
? Independent Pinout to each Device to Ease Circuit Design
? Trench P-Channel for Low On Resistance
? Ultra Low V F Schottky
? These are Pb-Free Devices
Applications
? Li-Ion Battery Charging
? High Side DC-DC Conversion Circuits
? High Side Drive for Small Brushless DC Motors
? Power Management in Portable, Battery Powered Products
V (BR)DSS
-20 V
V R MAX
20 V
G
http://onsemi.com
MOSFET
R DS(on) TYP
64 m W @ -4.5 V
85 m W @ -2.5 V
SCHOTTKY DIODE
V F TYP
0.35 V
S
A
I D MAX
-4.4 A
I F MAX
3.7 A
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Symbol
V DSS
V GS
Value
-20
± 8.0
Units
V
V
D
P-Channel MOSFET
C
Schottky Diode
Continuous Drain
Current (Note 1)
Steady
State
T J = 25 ° C
T J = 85 ° C
I D
-3.2
-2.3
A
8
ChipFET
CASE 1206A
t ≤ 5s
T J = 25 ° C
-4.4
1
STYLE 3
Power Dissipation
(Note 1)
Steady
State
T J = 25 ° C
P D
1.1
W
t ≤ 5s
2.1
Pulsed Drain Current
t p = 10 m s
I DM
-13
A
PIN
MARKING
Operating Junction and Storage Temperature
T J , T STG
-55 to
° C
CONNECTIONS
DIAGRAM
150
1
8
Source Current (Body Diode)
I S
2.5
A
A
C
1
8
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
T L
260
° C
A
2
7
6
C
2
7
SCHOTTKY DIODE MAXIMUM RATINGS
(T J = 25 ° C unless otherwise noted)
S
G
3
D
D
3
4
6
5
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Symbol
V RRM
V R
Value
20
20
Units
V
V
4
5
DA = Specific Device Code
M = Month Code
Average Rectified
Steady
I F
2.2
V
G
= Pb-Free Package
Forward Current
State
T J = 25 ° C
t ≤ 5s 3.7 A
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2007
October, 2007 - Rev. 0
1
Publication Order Number:
NTHD3133PF/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD4102P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
| NTHD4102P_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
| NTHD4102PT1 | 功能描述:MOSFET -20V -4.1A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4102PT1G | 功能描述:MOSFET -20V -4.1A Dual P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4102PT3G | 功能描述:MOSFET PFET 20V 4.8A 80M RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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