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参数资料
| 型号： | NTHD3133PFT3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH SGL 20V CHIPFET |
| 产品变化通告： | Product Obsolescence 13/Apr/2009 |
| 标准包装： | 10,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 3.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 680pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
NTHD3133PF
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 2)
Junction-to-Ambient – t ≤ 10 s (Note 2)
Symbol
R q JA
R q JA
Max
113
60
Units
° C/W
° C/W
2. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = -250 m A
-20
-15
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
I DSS
V DS = -16 V,
T J = 25 ° C
-1.0
m A
V GS = 0 V
T J = 125 ° C
-5.0
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 8.0 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = -250 m A
-0.45
2.7
-1.5
V
mV/ ° C
Drain-to-Source On-Resistance
R DS(on)
V GS = -4.5, I D = -3.2 A
64
80
m W
V GS = -2.5, I D = -2.2 A
V GS = -1.8, I D = -1.0 A
85
120
110
170
Forward Transconductance
g FS
V DS = -10 V, I D = -2.9 A
8.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
680
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = -10 V
100
70
Total Gate Charge
Q G(TOT)
7.4
nC
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Q G(TH)
Q GS
Q GD
V GS = -4.5 V, V DS = -10 V,
I D = -3.2 A
0.6
1.4
2.5
SWITCHING CHARACTERISTICS (Note 4)
Turn-On Delay Time
t d(ON)
5.8
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = -4.5 V, V DD = -10 V,
I D = -3.2 A, R G = 2.4 W
11.7
16
12.4
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V, I S = -2.5 A
T J = 25 ° C
-0.8
-1.2
V
Reverse Recovery Time
t RR
13.5
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, I S = -1.0 A ,
dI S /dt = 100 A/ m s
9.5
4.0
Reverse Recovery Charge
Q RR
6.5
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Maximum Instantaneous
Forward Voltage
Maximum Instantaneous
Reverse Current
Non-Repetitive Peak Surge Current
Symbol
V F
I R
I FSM
Test Conditions
I F = 0.1 A
I F = 1.0 A
V R = 10 V
V R = 20 V
Halfwave, Single Pulse 60 Hz
Min
Typ
Max
0.31
0.365
0.75
2.5
23
Units
V
mA
A
3. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
2
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