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| 型号： | NTHD4508NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 3.1A CHIPFET |
| 产品目录绘图： | MOSFET ChipFET |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 3.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 10V |
| 功率 - 最大： | 1.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTHD4508NT1GOSDKR |
NTHD4508N
Power MOSFET
20 V, 4.1 A, Dual N?Channel ChipFET t
Features
? Low R DS(on) and Fast Switching Speed
? Leadless ChipFET Package has 40% Smaller Footprint than TSOP?6
? Excellent Thermal Capabilities Where Heat Transfer is Required
? Pb?Free Package is Available
Applications
? DC?DC Buck/Boost Converters
? Battery and Low Side Switching in Portable Equipment Such as MP3
Players, Cell Phones, DSCs and PDAs
? Level Shifting
V (BR)DSS
20 V
http://onsemi.com
R DS(on) TYP
60 m W @ 4.5 V
80 m W @ 2.5 V
D 1 , D 2
I D MAX
4.1 A
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
20
± 12
Unit
V
V
G 1 , G 2
Continuous Drain
Current
Power Dissipation
Steady
State
t v 5s
Steady
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
T J = 25 ° C
I D
P D
3.0
2.2
4.1
1.13
A
W
S 1 , S 2
N?Channel MOSFET
ChipFET
CASE 1206A
State
t v 5s
T J = 85 ° C
T J = 25 ° C
0.59
2.1
STYLE 2
Pulsed Drain Current t p = 10 μ s
Operating Junction and Storage Temperature
I DM
T J ,
T STG
12
?55 to
150
A
° C
PIN
CONNECTIONS
MARKING
DIAGRAM
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
T L
260
° C
D 1 8
1 S 1
1
8
THERMAL RESISTANCE RATINGS
D 1 7
2 G 1
2
7
Parameter
Junction?to?Ambient – Steady State
(Note 1)
Symbol
R θ JA
Max
110
Unit
° C/W
D 2 6
D 2 5
3 S 2
4 G 2
3
4
6
5
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
C8 = Specific Device Code
M = Month Code
ORDERING INFORMATION
Device
NTHD4508NT1
NTHD4508NT1G
Package
ChipFET
ChipFET
(Pb?Free)
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2004
October, 2004 ? Rev. 3
1
Publication Order Number:
NTHD4508N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD4N02 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4N02F | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4N02FT1 | 功能描述:MOSFET 20V 3.9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4N02FT1G | 功能描述:MOSFET 20V 3.9A N-Channel w/3.7A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4P02 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
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