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参数资料
| 型号： | NTHD4508NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET 2N-CH 20V 3.1A CHIPFET |
| 产品目录绘图： | MOSFET ChipFET |
| 标准包装： | 10 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 75 毫欧 @ 3.1A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 180pF @ 10V |
| 功率 - 最大： | 1.13W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTHD4508NT1GOSDKR |
NTHD4508N
SOLDERING FOOTPRINTS*
0.45 7
2.03 2
0.08
2.03 2
0.08
0.018
0.63 5
0.025
0.63 5
0.025
1.03 2
0.043
0.17 8
0.007
0.45 7
0.018
0.66
0.026
0.711
0.028
0.66
0.026
0.25 4
0.010
SCALE 20:1
mm
inches
Figure 11. Basic
Figure 12. Style 2
*For additional information on our Pb?Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 11. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area, particularly
for the drain leads.
The minimum recommended pad pattern shown in Figure
12 improves the thermal area of the drain connections (pins
footprint. The drain copper area is 0.0019 sq. in. (or 1.22 sq.
mm). This will assist the power dissipation path away from
the device (through the copper lead?frame) and into the
board and exterior chassis (if applicable) for the single
device. The addition of a further copper area and/or the
addition of vias to other board layers will enhance the
performance still further.
5, 6, 7, 8) while remaining within the confines of the basic
http://onsemi.com
5
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD4N02 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4N02F | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4N02FT1 | 功能描述:MOSFET 20V 3.9A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4N02FT1G | 功能描述:MOSFET 20V 3.9A N-Channel w/3.7A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4P02 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
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