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| 型号： | NTHD5904NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CHAN 3.3A 20V CHIPFET |
| 产品变化通告： | Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 3.3A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 6nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 465pF @ 16V |
| 功率 - 最大： | 640mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTHD5904NT1GOSCT |
NTHD5904N
Power MOSFET
20 V, 4.5 A, Dual N?Channel, ChipFET t
Features
? Low R DS(on) and Fast Switching Speed
? Leadless ChipFET Package has 40% Smaller Footprint than TSOP?6.
http://onsemi.com
?
?
Ideal Device for Applications Where Board Space is at a Premium.
ChipFET Package Exhibits Excellent Thermal Capabilities. Ideal for
Applications Where Heat Transfer is Required.
Pb?Free Packages are Available
V (BR)DSS
20 V
R DS(on) TYP
40 m W @ 4.5 V
I D MAX
4.5 A
Applications
? DC?DC Buck or Boost Converters
? Low Side Switching
? Optimized for Battery and Low Side Switching Applications in
Computing and Portable Equipment
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
55 m W @ 2.5 V
N?Channel MOSFET
D 1 , D 2
Parameter
Drain?to?Source Voltage
Symbol
V DSS
Value
20
Unit
V
G 1 , G 2
Gate?to?Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
T A =25 ° C
T A =85 ° C
V GS
I D
± 8.0
3.3
2.4
V
A
S 1 , S 2
t ≤ 5s
T A =25 ° C
4.5
ChipFET
Power Dissipation
(Note 1)
Continuous Drain
Current (Note 2)
Steady
State
Steady
T A =25 ° C
T A =25 ° C
T A =85 ° C
P D
I D
1.13
2.5
1.8
W
A
CASE 1206A
STYLE 2
Power Dissipation
T A =25 ° C
State
(Note 2)
Pulsed Drain Current t p =10 m s
Operating Junction and Storage Temperature
P D
I DM
T J ,
0.64
10
?55 to
W
A
° C
PIN
CONNECTIONS
MARKING
DIAGRAM
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
T STG
I S
T L
150
2.6
260
A
° C
D 1 8
D 1 7
1 S 1
2 G 1
1
2
8
7
(1/8” from case for 10 s)
THERMAL RESISTANCE RATINGS
D 2 6
3 S 2
3
6
Parameter
Symbol
Max
Unit
D 2 5
4 G 2
4
5
Junction?to?Ambient – Steady State (Note 1)
Junction?to?Ambient – t ≤ 5 s (Note 1)
Junction?to?Ambient – Steady State (Note 2)
R q JA
R q JA
R q JA
110
60
195
° C/W
(Top View)
D3 = Specific Device Code
Maximum ratings are those values beyond which device damage can occur.
M = Month Code
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
G
= Pb?Free Package
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 0.214 in sq).
3. ESD Rating Information: Human Body Model (HBM) Class 0.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
? Semiconductor Components Industries, LLC, 2005
November, 2005 ? Rev. 2
1
Publication Order Number:
NTHD5904N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD5904NT3 | 功能描述:MOSFET 20V 4.5A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904NT3G | 功能描述:MOSFET 20V 4.5A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904T1 | 功能描述:MOSFET 2N-CH 20V 3.1A CHIPFET RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| NTHD5904T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET Dual N-Channel |
| NTHD5905T1 | 功能描述:MOSFET 2P-CH 8V 3A CHIPFET RoHS:否 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
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