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| 型号： | NTHS4166NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 4.9A CHIPFET |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 22 毫欧 @ 4.9A，10V |
| Id 时的 Vgs(th)（最大）： | 2.3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 9.2nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 900pF @ 15V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
| 其它名称： | NTHS4166NT1G-ND NTHS4166NT1GOSTR |
NTHS4166N
Power MOSFET
30 V, 8.2 A, Single N-Channel,
ChipFET t Package
Features
? Trench Technology
? Low R DS(on) to Minimize Conduction Losses
? Leadless ChipFET Package has 40% Smaller Footprint than TSOP-6
? Excellent Thermal Capabilities
? This is a Pb-Free Device
Applications
? Load Switching
? DC-DC Converters
? Low Side Switching
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
http://onsemi.com
R DS(on) Max
22 m W @ 10 V
27 m W @ 4.5 V
D
G
I D Max
8.2 A
Parameter
Symbol
Value
Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
V DSS
V GS
30
± 20
V
V
S
N-Channel MOSFET
Continuous Drain
Current R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
6.6
4.8
A
MARKING DIAGRAM
Power Dissipation
R q JA (Note 1)
Steady
T A = 25 ° C
P D
1.5
W
8
AND PIN ASSIGNMENT
D D D S
Continuous Drain
Current R q JA (Note 2)
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JA , t v 5 s
(Note 1)
Power Dissipation
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
I D
P D
4.9
3.6
0.8
8.2
5.9
2.2
A
W
A
W
1 466 M
ChipFET G
CASE 1206A 1
D D D G
STYLE 1
466 = Specific Device Code
M = Month Code
G = Pb-Free Package
R q JA (Note 1)
Pulsed Drain Current
TA = 25 ° C,
t p = 10 m s
I DM
32
A
ORDERING INFORMATION
Operating Junction and Storage Temperature
Source Current (Body Diode) R q JF
T J ,
T STG
I S
-55 to
150
2.6
° C
A
Device
NTHS4166NT1G
Package
ChipFET
(Pb-Free)
Shipping ?
3000/Tape & Reel
Single Pulse Drain-to-Source Avalanche
Energy T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 20 A pk , L = 0.1 mH, R G = 25 W
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
T L
20
260
mJ
° C
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu.
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2007
December, 2007 - Rev. 0
1
Publication Order Number:
NTHS4166N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHS4501N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 30 V, 6.7 A, Single N−Channel, ChipFET Package |
| NTHS4501NT1 | 功能描述:MOSFET 30V 6.7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS4501NT1G | 功能描述:MOSFET 30V 6.7A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS50680RJ | 制造商:MACOM 制造商全称:Tyco Electronics 功能描述:Aluminium Housed Power Resistors |
| NTHS5402T1 | 功能描述:MOSFET N-CH 30V 4.9A CHIPFET RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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