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参数资料
| 型号： | NTHS5404T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 5.2A CHIPFET |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 5.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 600mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 其它名称： | NTHS5404T1GOSDKR |
NTHS5404T1
Power MOSFET
20 V, 7.2 A, N ? Channel ChipFET E
Features
? Low R DS(on) for Higher Efficiency
? Logic Level Gate Drive
? Miniature ChipFET Surface Mount Package Saves Board Space
? Pb ? Free Package is Available
Applications
? Power Management in Portable and Battery ? Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
V (BR)DSS
20 V
http://onsemi.com
R DS(on) TYP
25 m W @ 4.5 V
D
I D MAX
7.2 A
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
Symbol
5 Secs
Steady
State
Unit
G
Drain ? Source Voltage
Gate ? Source Voltage
V DS
V GS
20
" 12
V
V
S
N ? Channel MOSFET
Continuous Drain Current
(T J = 150 ° C) (Note 1)
T A = 25 ° C
T A = 85 ° C
Pulsed Drain Current
I D
I DM
7.2
5.2
" 20
5.2
3.8
A
A
ChipFET
CASE 1206A
STYLE 1
Continuous Source Current
(Diode Conduction) (Note 1)
I S
7.2
5.2
A
PIN
MARKING
Maximum Power Dissipation
(Note 1)
T A = 25 ° C
T A = 85 ° C
Operating Junction and Storage
Temperature Range
P D
T J , T stg
2.5 1.3
1.3 0.7
? 55 to +150
W
° C
CONNECTIONS
D 8 1 D
D 7 2 D
D 6 3 D
1
2
3
DIAGRAM
8
7
6
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
S
5
4 G 4
A2 = Specific Device Code
M = Month Code
G = Pb ? Free Package
5
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTHS5404T1
NTHS5404T1G
Package
ChipFET
ChipFET
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
June, 2008 ? Rev. 5
1
Publication Order Number:
NTHS5404T1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHS5404T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTHS5441 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:−20 V, −5.3 A, P−Channel ChipFET |
| NTHS5441PT1G | 功能描述:MOSFET CHIPFETS 20V .055 TR PFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5441T1 | 功能描述:MOSFET -20V -5.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5441T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET P-Channel ChipFET |
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