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| 型号： | NTHS5404T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 5/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 5.2A CHIPFET |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 5.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 30 毫欧 @ 5.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 600mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 18nC @ 4.5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 其它名称： | NTHS5404T1GOSDKR |
NTHS5404T1
SOLDERING FOOTPRINT*
1
2.03 2
0.08
1
2.03 2
0.08
1.72 7
2.36 2
0.093
0.63 5
0.025
2.36 2
0.093
0.068
PITCH
8X
0.45 7
0.018
Figure 12. Basic
8X
0.66
0.026
mm
inches
2X
0.45 7
0.018
2X
0.66
0.026
Figure 13. Style 1 and 4
mm
inches
ADDITIONAL SOLDERING FOOTPRINTS*
1
2.03 2
0.08
2.03 2
0.08
2X
0.66
4X
0.45 7
0.018
2X
1.09 2
0.043
1
0.026
1.09 2
0.043
2.36 2
0.63 5
0.025
PITC H
0.093
0.63 5
0.025
PITCH
2.36 2
0.093
4X
0.66
0.026
Style 2
2X
1.118
0.044
mm
inches
2X
0.45 7
0.018
1.118
0.044
Style 3
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
BASIC PAD PATTERNS
The basic pad layout with dimensions is shown in
Figure 12. This is sufficient for low power dissipation
MOSFET applications, but power semiconductor
performance requires a greater copper pad area,
particularly for the drain leads.
The minimum recommended pad pattern shown in
Figure 13 improves the thermal area of the drain
confines of the basic footprint. The drain copper area is
0.0054 sq. in. (or 3.51 sq. mm). This will assist the power
dissipation path away from the device (through the copper
lead ? frame) and into the board and exterior chassis (if
applicable) for the single device. The addition of a further
copper area and/or the addition of vias to other board layers
will enhance the performance still further.
connections (pins 1, 2, 3, 6, 7, 8) while remaining within the
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHS5404T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTHS5441 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:−20 V, −5.3 A, P−Channel ChipFET |
| NTHS5441PT1G | 功能描述:MOSFET CHIPFETS 20V .055 TR PFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5441T1 | 功能描述:MOSFET -20V -5.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5441T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET P-Channel ChipFET |
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