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参数资料
型号： NTJD4001NT2G
厂商： ON Semiconductor
文件页数： 1/5页
文件大小： 0K
描述： MOSFET N-CH DUAL 30V SOT-363
产品变化通告： Product Obsolescence 14/Apr/2010
标准包装： 3,000
FET 型： 2 个 N 沟道（双）
FET 特点： 标准
漏极至源极电压(Vdss)： 30V
电流 - 连续漏极(Id) @ 25° C： 250mA
开态Rds（最大）@ Id, Vgs @ 25° C： 1.5 欧姆 @ 10mA，4V
Id 时的 Vgs(th)（最大）： 1.5V @ 100µA
闸电荷(Qg) @ Vgs： 1.3nC @ 5V
输入电容 (Ciss) @ Vds： 33pF @ 5V
功率 - 最大： 272mW
安装类型： 表面贴装
封装/外壳： 6-TSSOP，SC-88，SOT-363
供应商设备封装： SOT-363
包装： 带卷 (TR)
NTJD4001N, NVTJD4001N
Small Signal MOSFET
30 V, 250 mA, Dual N ? Channel, SC ? 88
Features
? Low Gate Charge for Fast Switching
? Small Footprint ? 30% Smaller than TSOP ? 6
? ESD Protected Gate
? AEC Q101 Qualified ? NVTJD4001N
? These Devices are Pb ? Free and are RoHS Compliant
Applications
? Low Side Load Switch
? Li ? Ion Battery Supplied Devices ? Cell Phones, PDAs, DSC
? Buck Converters
? Level Shifts
V (BR)DSS
30 V
http://onsemi.com
R DS(on) TYP
1.0 W @ 4.0 V
1.5 W @ 2.5 V
SOT ? 363
S C ? 88 (6 LEADS )
I D Max
250 mA
S 1
1
6
D 1
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Units
V
G 1
2
5
G 2
Gate ? to ? Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
P D
± 20
250
180
272
V
mA
mW
D 2
3
Top View
4
S 2
Pulsed Drain Current t =10 m s
Operating Junction and Storage Temperature
I DM
T J , T STG
600
? 55 to
150
mA
° C
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
T L
TE M G
G
1
Source Current (Body Diode) I S 250 mA
Lead Temperature for Soldering Purposes 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using min pad size
(Cu area = 0.155 in sq [1 oz] including traces).
1
SOT ? 363
CASE 419B
STYLE 26
S1 G1 D2
TE = Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTJD4001NT1G
NVTJD4001NT1G
Package
SOT ? 363
(Pb ? Free)
SOT ? 363
(Pb ? Free)
Shipping ?
3000 / Tape &
Reel
3000 / Tape &
Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2011
September, 2011 ? Rev. 6
1
Publication Order Number:
NTJD4001N/D
相关PDF资料
PDF描述
NTJD4105CT2G MOSFET N/P-CHAN COMPL SOT-363
NTJD4152PT1 MOSFET P-CHAN DUAL 20V SOT-363
NTJD4158CT1G MOSFET N/P-CHAN COMPL SOT-363
NTJD4401NT1G MOSFET 2N-CH 20V 630MA SOT-363
NTJD5121NT2G MOSFET N-CH 60V DUAL ESD SOT363
相关代理商/技术参数
参数描述
NTJD4105C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88
NTJD4105CT1 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4105CT1G 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4105CT2 功能描述:MOSFET 20V/-8V 0.63A/-.775A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTJD4105CT2G 功能描述:MOSFET 20V/-8V 0.63A/-.775A Complementary RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
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