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参数资料
| 型号： | NTHS5441T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CH 3.9A 20V CHIPFET |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 46 毫欧 @ 3.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 710pF @ 5V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTHS5441T1GOSCT |
NTHS5441
Power MOSFET
?20 V, ?5.3 A, P?Channel ChipFET ]
Features
? Low R DS(on)
? Higher Efficiency Extending Battery Life
? Logic Level Gate Drive
? Miniature ChipFET Surface Mount Package
? Pb?Free Package is Available
Applications
? Power Management in Portable and Battery?Powered Products; i.e.,
Cellular and Cordless Telephones and PCMCIA Cards
V (BR)DSS
?20 V
G
http://onsemi.com
R DS(on) TYP
46 m W @ ?4.5 V
S
I D MAX
?5.3 A
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Rating
Drain?Source Voltage
Symbol
V DS
5 sec
Steady
State
?20
Unit
V
D
P?Channel MOSFET
Gate?Source Voltage
V GS
" 12
V
Continuous Drain Current
(T J = 150 ° C) (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
?5.3
?3.8
?3.9
?2.8
A
1
8
ChipFET
CASE 1206A
STYLE 1
Pulsed Drain Current
I DM
" 20
A
Continuous Source Current
(Note 1)
I S
?5.3
?3.9
A
PIN
CONNECTIONS
MARKING
DIAGRAM
Maximum Power Dissipation
P D
W
(Note 1)
T A = 25 ° C
T A = 85 ° C
2.5
1.3
1.3
0.7
D
D
8
7
1
2
D
D
1
2
8
7
Operating Junction and Storage
Temperature Range
T J , T stg
?55 to +150
° C
D
6
3
D
3
6
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
S
5
4
G
4
5
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
A3 = Specific Device Code
M = Month Code
G = Pb?Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NTHS5441T1
NTHS5441T1G
Package
ChipFET
ChipFET
(Pb?Free)
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
July, 2005 ? Rev. 13
1
Publication Order Number:
NTHS5441T1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHS5443 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET |
| NTHS5443T1 | 功能描述:MOSFET -20V -4.9A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5443T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET P-Channel ChipFET? |
| NTHS5443T1G | 功能描述:MOSFET -20V -4.9A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHS5445T1 | 功能描述:MOSFET P-CH 8V 5.2A CHIPFET RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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