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参数资料
| 型号： | NTHD4N02FT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.9A CHIPFET |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 910mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
| 其它名称： | NTHD4N02FT1GOS |
NTHD4N02F
Power MOSFET and
Schottky Diode
20 V, 3.9 A, N?Channel, with 3.7 A
Schottky Barrier Diode, ChipFET t
Features
http://onsemi.com
?
?
?
?
?
Leadless SMD Package Featuring a MOSFET and Schottky Diode
40% Smaller than TSOP?6 Package with Better Thermals
Super Low Gate Charge MOSFET
Ultra Low V F Schottky
Pb?Free Package is Available
V (BR)DSS
20 V
MOSFET
R DS(on) TYP
60 m W @ 4.5 V
80 m W @ 2.5 V
I D MAX
3.9 A
Applications
SCHOTTKY DIODE
? Fast Switching, low Gate Charge for DC?to?DC Buck and Boost
Converters
? Li?Ion Battery Applications in Cell Phones, PDAs, DSCs,
and Media Players
? Load Side Switching
V R MAX
20 V
D 1
V F TYP
0.35 V
A
I F MAX
3.7 A
MOSFET MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain?to?Source Voltage
Symbol
V DSS
Value
20
Unit
V
G 1
Gate?to?Source Voltage
V GS
± 12
V
S 1
C
Continuous Drain
Current
Steady
State
t v 5s
T J = 25 ° C
T J = 85 ° C
T J = 25 ° C
I D
2.9
2.1
3.9
A
N?Channel MOSFET
SCHOTTKY DIODE
ChipFET ]
CASE 1206A
Pulsed Drain Current
t p =10 m s
I DM
12
A
STYLE 3
Power Dissipation
Steady
State
T J = 25 ° C
T J = 85 ° C
P D
0.91
0.36
W
PIN CONNECTIONS
MARKING
DIAGRAM
t v 5s T J = 25 ° C
Continuous Source Current (Body Diode)
Operating Junction and Storage
Temperature
Lead Temperature for Soldering Purposes
I S
T J , T STG
T L
2.1
2.6
?55 to 150
260
A
° C
° C
A
A
S
1
2
3
8
7
6
C
C
D
1
2
3
(1/8” from case for 10 s)
G
4
5
D
4
SCHOTTKY DIODE MAXIMUM RATINGS
(T J = 25 ° C unless otherwise noted)
C2 = Specific Device Code
Parameter
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Symbol
V RRM
V R
Value
20
20
Unit
V
V
M = Month Code
G = Pb?Free Package
ORDERING INFORMATION
Average Rectified
Forward Current
Steady
State
T J = 25 ° C
I F
2.2
A
Device
NTHD4N02FT1
Package
ChipFET
Shipping ?
3000/Tape & Reel
t v 5s 3.7 A
Maximum ratings are those values beyond which device damage can occur.
NTHD4N02FT1G
ChipFET
(Pb?Free)
3000/Tape & Reel
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
November, 2005 ? Rev. 8
1
Publication Order Number:
NTHD4N02F/D
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相关代理商/技术参数 |
参数描述 |
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| NTHD4P02 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Typical Uses for FETKY Devices |
| NTHD4P02F | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4P02F_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode |
| NTHD4P02FT1 | 功能描述:MOSFET -20V -3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4P02FT1G | 功能描述:MOSFET -20V -3A P-Channel w/3A Schottky RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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