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| 型号： | NTHD4N02FT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 2.9A CHIPFET |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 80 毫欧 @ 2.9A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 4nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 910mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 带卷 (TR) |
| 其它名称： | NTHD4N02FT1GOS |
NTHD4N02F
THERMAL RESISTANCE RATINGS
Parameter
Junction?to?Ambient – Steady State (Note 1)
Junction?to?Ambient – t v 5 s
Symbol
R q JA
R q JA
Max
110
60
Unit
° C/W
° C/W
1. Surface Mounted on FR4 Board using 1 in sq. pad size (Cu area = 1.27 in sq. [1 oz] including traces).
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
V (BR)DSS
V GS = 0 V, I D = 250 m A
20
28
V
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V
T J = 25 ° C
1.0
m A
V DS = 16 V
T J = 85 ° C
5.0
Gate?to?Source Leakage Current
I GSS
V DS = 0 V, V GS = " 12 V
" 100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Drain?to?Source On?Resistance
V GS(TH)
R DS(on)
V GS = V DS , I D = 250 m A
V GS = 4.5, I D = 2.9 A
0.6
0.058
1.2
0.080
V
W
V GS = 2.5, I D = 2.3 A
0.077
0.115
Forward Transconductance
g FS
V DS = 10 V, I D = 2.9 A
6.0
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
180
300
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
80
30
130
50
Total Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TOT)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V,
I D = 2.9 A
2.6
0.6
0.7
4.0
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn?On Delay Time
t d(ON)
5.0
10
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 16 V,
I D = 2.9 A, R G = 2.5 W
9.0
10
3.0
18
20
6.0
DRAIN?SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
V SD
t RR
ta
tb
Q RR
V GS = 0 V, I S = 2.6 A
V GS = 0 V, I S = 2.6 A,
dI S /dt = 100 A/ m s
0.8
12.5
9.0
3.5
6.0
1.15
V
ns
nC
SCHOTTKY DIODE ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Maximum Instantaneous Forward Voltage
Symbol
V F
Test Conditions
I F = 0.1 A
Min
Typ
Max
0.31
Units
V
I F = 1.0 A
0.365
Maximum Instantaneous Reverse Current
I R
V R = 10 V
0.75
mA
V R = 20 V
2.5
Non?Repetitive Peak Surge Current
I FSM
Halfwave, Single Pulse, 60 Hz
23
A
2. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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