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参数资料
| 型号： | NTHD5903T1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CH DUAL20V CHIPFET |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 1 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 155 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 600mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.4nC @ 4.5V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTHD5903T1GOSCT |
NTHD5903
Power MOSFET
?20 V, ?3.0 A, Dual P?Channel ChipFET E
Features
? Low R DS(on) for Higher Efficiency
? Logic Level Gate Drive
? Miniature ChipFET Surface Mount Package Saves Board Space
? Pb?Free Package is Available
Applications
? Power Management in Portable and Battery?Powered Products;
i.e., Cellular and Cordless Telephones and PCMCIA Cards
V (BR)DSS
?20 V
G1
http://onsemi.com
R DS(on) TYP
130 m W @ ?4.5 V
215 m W @ ?2.5 V
S1
G2
I D MAX
?3.0 A
S2
MAXIMUM RATINGS (T A = 25 ° C unless otherwise noted)
Steady
Rating
Drain?Source Voltage
Symbol
V DS
5 secs
?20
State
Unit
V
D1
P?Channel MOSFET
D2
P?Channel MOSFET
Gate?Source Voltage
V GS
" 12
V
Continuous Drain Current
(T J = 150 ° C) (Note 1)
T A = 25 ° C
T A = 85 ° C
Pulsed Drain Current
I D
I DM
" 3.0
" 2.2
" 10
" 2.2
" 1.6
A
A
ChipFET
CASE 1206A
STYLE 2
Continuous Source Current
(Diode Conduction) (Note 1)
I S
?3.0
?2.2
A
PIN
CONNECTIONS
MARKING
DIAGRAM
Maximum Power Dissipation
(Note 1)
T A = 25 ° C
T A = 85 ° C
P D
2.1
1.1
1.1
0.6
W
D 1 8
D 1 7
1 S 1
2 G 1
1
2
8
7
Operating Junction and Storage
Temperature Range
T J , T stg
?55 to +150
° C
D 2 6
3 S 2
3
6
Maximum ratings are those values beyond which device damage can occur.
D 2 5
4 G 2
4
5
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.27 in sq
[1 oz] including traces).
A7 = Specific Device Code
M = Month Code
G = Pb?Free Package
ORDERING INFORMATION
Device
NTHD5903T1
NTHD5903T1G
Package
ChipFET
ChipFET
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2005
November, 2005 ? Rev. 4
1
Publication Order Number:
NTHD5903/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD5904N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
| NTHD5904N_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 4.5 A, Dual N−Channel, ChipFET |
| NTHD5904NT1 | 功能描述:MOSFET 20V 4.5A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904NT1G | 功能描述:MOSFET 20V 4.5A Dual N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD5904NT3 | 功能描述:MOSFET 20V 4.5A Dual RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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