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参数资料
| 型号： | NTHD3102CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/11页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH COMPL 20V CHIPFET |
| 标准包装： | 1 |
| 系列： | chipfet™ |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 4A，3.1A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 45 毫欧 @ 4.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.9nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 510pF @ 10V |
| 功率 - 最大： | 1.1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-SMD，扁平引线 |
| 供应商设备封装： | ChipFET? |
| 包装： | 标准包装 |
| 其它名称： | NTHD3102CT1GOSDKR |
NTHD3102C
Power MOSFET
Complementary, 20 V, +5.5 A /?4.2 A,
ChipFET t
Features
?
?
?
?
?
?
Complementary N?Channel and P?Channel MOSFET
Small Size, 40% Smaller than TSOP?6 Package
Leadless SMD Package Provides Great Thermal Characteristics
Leading Edge Trench Technology for Low On Resistance
Reduced Gate Charge to Improve Switching Response
This is a Pb?Free Device
V (BR)DSS
N?Channel
20 V
http://onsemi.com
R DS(on) TYP
29 m W @ 4.5 V
37 m W @ 2.5 V
I D MAX
(Note 1)
5.5 A
Applications
48 m W @ 1.8 V
?
?
?
?
DC?DC Conversion Circuits
Load/Power Switching
Single or Dual Cell Li?Ion Battery Supplied Devices
Ideal for Power Management Applications in Portable, Battery
Powered Products
P?Channel
?20 V
D 1
64 m W @ 4.5 V
83 m W @ 2.5 V
105 m W @ 1.8 V
?4.2 A
S2
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
Parameter
Drain?to?Source Voltage
Symbol
V DSS
Value
20
Unit
V
G 1
G 2
Gate?to?Source Voltage
N?Ch
V GS
" 8.0
V
S 1
D 2
P?Ch
" 8.0
N?Channel MOSFET
P?Channel MOSFET
N?Channel
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
4.0
2.9
A
ChipFET
CASE 1206A
t ≤ 5s
T A = 25 ° C
5.5
STYLE 2
P?Channel
Continuous Drain
Current (Note 1)
Steady
State
T A = 25 ° C
T A = 85 ° C
I D
3.1
2.2
A
PIN CONNECTIONS
MARKING
DIAGRAM
t ≤ 5s
T A = 25 ° C
4.2
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
1.1
W
D 1
8
1
S 1
1
8
t ≤ 5s
2.1
D 1
7
2
G 1
2
7
Gate?to?Source ESD Rating ?
ESD
100
V
D 2
6
3
S 2
3
6
(Human Body Model, Method 3015)
Stresses exceeding Maximum Ratings may damage the device. Maximum
D 2
5
4
G 2
4
5
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
(Bottom View)
(Top View)
Recommended Operating Conditions may affect device reliability.
1. Surface?mounted on FR4 board using 1 in sq pad size
(Cu. area = 1.127 in sq [1 oz] including traces).
D6 = Specific Device Code
M = Date Code
G = Pb?Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 9 of this data sheet.
? Semiconductor Components Industries, LLC, 2006
September, 2006 ? Rev. 2
1
Publication Order Number:
NTHD3102C/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTHD3133PF | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET? |
| NTHD3133PFT1G | 功能描述:MOSFET PFET FETKY 20V CHIPFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD3133PFT3G | 功能描述:MOSFET -20V -4.4A P-CHANNEL W/3.7A SCHOTTKY RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTHD4102P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
| NTHD4102P_05 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -4.1 A, Dual P-Channel ChipFET |
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