参数资料
型号: NTGS4141NT1G
厂商: ON Semiconductor
文件页数: 4/6页
文件大小: 0K
描述: MOSFET N-CH 30V 3.5A 6-TSOP
产品目录绘图: MOSFET 6-TSOP
标准包装: 10
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 30V
电流 - 连续漏极(Id) @ 25° C: 3.5A
开态Rds(最大)@ Id, Vgs @ 25° C: 25 毫欧 @ 7A,10V
Id 时的 Vgs(th)(最大): 3V @ 250µA
闸电荷(Qg) @ Vgs: 12nC @ 10V
输入电容 (Ciss) @ Vds: 560pF @ 24V
功率 - 最大: 500mW
安装类型: 表面贴装
封装/外壳: SC-74,SOT-457
供应商设备封装: 6-TSOP
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: NTGS4141NT1GOSDKR
NTGS4141N
TYPICAL PERFORMANCE CURVES
1200
1000
C iss
V DS = 0 V
V GS = 0 V
T J = 25 ° C
10
8
QT
V GS
800
6
600
C iss
400 C rss
4
Q GS
Q GD
200
0
10
5
V GS
0
C rss
5
V DS
10
15
20
C oss
25
2
0
0
2
I D = 7 A
V DD = 15 V
T J = 25 ° C
4 6 8 10
Q G , TOTAL GATE CHARGE (nC)
12
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000
7
Figure 8. Gate ? To ? Source and
Drain ? To ? Source Voltage vs. Total Charge
100
V DD = 24 V
I D = 7 A
V GS = 10 V
t d(off)
t f
6
5
4
V GS = 0 V
T J = 25 ° C
t r
3
10
t d(on)
2
1
1
1
10
100
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
100
R G , GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
60
V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
I D = 10.4 A
10
10 m s
100 m s
40
1
0.1
0 V ≤ V GS ≤ 20 V
SINGLE PULSE
T C = 25 ° C
R DS(on) LIMIT
THERMAL LIMIT
1 ms
10 ms
dc
20
0.01
0.1
PACKAGE LIMIT
1
10
100
0
25
50
75
100
125
150
V DS , DRAIN ? TO ? SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
http://onsemi.com
4
T J , STARTING JUNCTION TEMPERATURE ( ° C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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