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| 型号： | NTGS4141NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 3.5A 6-TSOP |
| 产品目录绘图： | MOSFET 6-TSOP |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 3.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 25 毫欧 @ 7A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 12nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 560pF @ 24V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTGS4141NT1GOSDKR |
NTGS4141N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
18.4
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 20 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
1.0
5.7
3.0
V
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 10 V, I D = 7.0 A
21.5
25
m W
V GS = 4.5 V, I D = 6.0 A
30
35
Forward Transconductance
g FS
V DS = 10 V, I D = 7.0 A
30
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
560
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 24 V
115
75
Total Gate Charge
Q G(TOT)
12
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 10 V, V DS = 15 V,
I D = 7.0 A
0.85
1.9
3.0
Total Gate Charge
Q G(TOT)
6.0
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 15 V,
I D = 7.0 A
0.8
1.85
3.0
Gate Resistance
R G
2.8
W
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
6.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 10 V, V DS = 24 V,
I D = 7.0 A, R G = 3.0 W
15
18
4.0
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = 2.0 A
T J = 25 ° C
T J = 125 ° C
0.78
0.63
1.0
V
Reverse Recovery Time
t RR
15
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V
dI S /dt = 100 A/ m s, I S = 2.0 A
9.0
6.0
Reverse Recovery Charge
Q RR
8.0
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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