- 您现在的位置：买卖IC网 > Datasheet目录488 > NTGS3443T1 (ON Semiconductor)MOSFET P-CH 20V 2.2A 6-TSOP Datasheet资料下载
参数资料
| 型号： | NTGS3443T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.2A 6-TSOP |
| 产品变化通告： | Wire Change 08/Oct/2008 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 4.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 565pF @ 5V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
| 其它名称： | NTGS3443T1OS |
NTGS3443, NVGS3443
Power MOSFET
4.4 Amps, 20 Volts
P ? Channel TSOP ? 6
Features
? Ultra Low R DS(on)
? Higher Efficiency Extending Battery Life
? Miniature TSOP ? 6 Surface Mount Package
? These Devices are Pb ? Free and are RoHS Compliant
? NVGS Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC ? Q101
Qualified and PPAP Capable
Applications
? Power Management in Portable and Battery ? Powered Products,
i.e.: Cellular and Cordless Telephones, and PCMCIA Cards
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
http://onsemi.com
4.4 AMPERES
20 VOLTS
R DS(on) = 65 m W
P ? Channel
1 2 5 6
3
4
Rating
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
Thermal Resistance
Junction ? to ? Ambient (Note 1)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 m S)
Symbol
V DSS
V GS
R q JA
P d
I D
I DM
Value
? 20
" 12
244
0.5
? 2.2
? 10
Unit
Volts
Volts
° C/W
Watts
Amps
Amps
1
TSOP ? 6
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain Drain Source
6 5 4
443 M G
G
Thermal Resistance
Junction ? to ? Ambient (Note 2)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 m S)
Thermal Resistance
Junction ? to ? Ambient (Note 3)
Total Power Dissipation @ T A = 25 ° C
Drain Current ? Continuous @ T A = 25 ° C
? Pulsed Drain Current (T p t 10 m S)
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering
Purposes for 10 Seconds
R q JA
P d
I D
I DM
R q JA
P d
I D
I DM
T J , T stg
T L
128
1.0
? 3.1
? 14
62.5
2.0
? 4.4
? 20
? 55 to
150
260
° C/W
Watts
Amps
Amps
° C/W
Watts
Amps
Amps
° C
° C
CASE 318G
STYLE 1 1 2 3
Drain Drain Gate
443 = Specific Device Code
M = Date Code*
G = Pb ? Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device Package Shipping ?
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Minimum FR ? 4 or G ? 10 PCB, operating to steady state.
2. Mounted onto a 2 in square FR ? 4 board (1 in sq, 2 oz. Cu. 0.06 ″ thick single
sided), operating to steady state.
3. Mounted onto a 2 in square FR ? 4 board (1 in sq, 2 oz. Cu. 0.06 ″ thick single
sided), t t 5.0 seconds.
NTGS3443T1G TSOP ? 6 3000 / Tape & Reel
(Pb ? Free)
NVGS3443T1G TSOP ? 6 3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
December, 2012 ? Rev. 5
1
Publication Order Number:
NTGS3443T1/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTGS3446T1 | MOSFET N-CH 20V 2.5A 6-TSOP |
| NTGS3447PT1G | MOSFET P-CH 12V 3.4A 6-TSOP |
| NTGS3455T1 | MOSFET P-CH 30V 2.5A 6-TSOP |
| NTGS4111PT2G | MOSFET P-CH 30V 2.6A 6-TSOP |
| NTGS4141NT1G | MOSFET N-CH 30V 3.5A 6-TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3443T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 2 Amps， 20 Volts |
| NTGS3443T1G | 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3443T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTGS3443T2G | 功能描述:MOSFET PFET 20V 0.10R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3446 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 |
发布紧急采购，3分钟左右您将得到回复。