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| 型号： | NTGS3443T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.2A 6-TSOP |
| 产品变化通告： | Wire Change 08/Oct/2008 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 65 毫欧 @ 4.4A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 15nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 565pF @ 5V |
| 功率 - 最大： | 500mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
| 其它名称： | NTGS3443T1OS |
NTGS3443, NVGS3443
PACKAGE DIMENSIONS
TSOP ? 6
CASE 318G ? 02
ISSUE V
C
STYLE 1:
PIN 1. DRAIN
2. DRAIN
E1
NOTE 5
0.05
A1
e
6
1
5
2
D
4
3
E
b
A
c
H
L
M
DETAIL Z
DETAIL Z
L2
GAUGE
PLANE
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM
LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR
GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSIONS D
AND E1 ARE DETERMINED AT DATUM H.
5. PIN ONE INDICATOR MUST BE LOCATED IN THE INDICATED ZONE.
MILLIMETERS
DIM MIN NOM MAX
A 0.90 1.00 1.10
A1 0.01 0.06 0.10
b 0.25 0.38 0.50
c 0.10 0.18 0.26
D 2.90 3.00 3.10
E 2.50 2.75 3.00
E1 1.30 1.50 1.70
e 0.85 0.95 1.05 3. GATE
L 0.20 0.40 0.60 4. SOURCE
L2 0.25 BSC 5. DRAIN
M 0 ° ? 1 0 ° 6. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
6X
0.60
3.20
6X
0.95
0.95
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTGS3443T1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3443T1/D | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Power MOSFET 2 Amps， 20 Volts |
| NTGS3443T1G | 功能描述:MOSFET 20V 2A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3443T1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| NTGS3443T2G | 功能描述:MOSFET PFET 20V 0.10R TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3446 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 5.1 Amps, 20 Volts N−Channel TSOP−6 |
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