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| 型号： | NTGD4169FT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.6A 6-TSOP |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 295pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD4169F
Power MOSFET and
Schottky Diode
30 V, 2.9 A, N ? Channel with Schottky
Barrier Diode, TSOP ? 6
Features
? Fast Switching
? Low Gate Change
? Low R DS(on)
? Low V F Schottky Diode
? Independently Connected Devices to Provide Design Flexibility
? This is a Pb ? Free Device
Applications
? DC ? DC Converters
? Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
30 V
V R Max
30 V
http://onsemi.com
N ? CHANNEL MOSFET
R DS(on) Max
90 m W @ 4.5 V
125 m W @ 2.5 V
SCHOTTKY DIODE
V F Max
0.53 V
A
D
I D Max
2.6 A
2.2 A
I F Max
1.0 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
30
Unit
V
Gate ? to ? Source Voltage
N ? Channel Steady State
Continuous Drain
Current (Note 1)
t ≤ 5 s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
V GS
I D
± 12
2.6
1.9
2.9
V
A
G
S
K
t ≤ 5 s
Power Dissipation Steady State T A = 25 ° C
(Note 1)
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
P D
I DM
T J , T STG
0.9
1.1
8.6
? 25 to
150
W
A
° C
N ? Channel MOSFET
1
Schottky Diode
MARKING
DIAGRAM
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
I S
T L
0.9
260
A
° C
TSOP ? 6
CASE 318G
STYLE 15
1
TD M G
G
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage V RRM 30 V
TD = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
DC Blocking Voltage
Average Rectified Forward Current
V R
I F
30
1
V
A
PIN CONNECTION
THERMAL RESISTANCE RATINGS
Parameter
Junction ? to ? Ambient – Steady State (Note
1)
Symbol
R q JA
Value
140
Unit
° C/W
A
S
1
2
6
5
K
N/C
D
Junction ? to ? Ambient – t ≤ 5 s (Note 1) R q JA 110 ° C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces).
G 3 4
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
May, 2008 ? Rev. 1
1
Publication Order Number:
NTGD4169F/D
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