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| 型号： | NTGS1135PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V 4.6A 6-TSOP |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 31 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 850mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2200pF @ 6V |
| 功率 - 最大： | 970mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGS1135P
Power MOSFET
? 8 V, ? 5.8 A, Single P ? Channel, TSOP ? 6
Features
? Ultra Low R DS(on)
? 1.2 V R DS(on) Rating
? This is a Pb ? Free Device
http://onsemi.com
Applications
? Load Switch
? Battery Management
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol
Drain ? to ? Source Voltage
V DSS
Gate ? to ? Source Voltage
V GS
Value
? 8.0
$ 6.0
Unit
V
V
V (BR)DSS
? 8 V
R DS(ON) MAX
31 m W @ ? 4.5 V
38 m W @ ? 2.5 V
57 m W @ ? 1.8 V
300 m W @ ? 1.2 V
P ? Channel
1 2 5 6
I D MAX
? 4.6 A
Continuous Drain
Current (Note 1)
Steady
State
t v 5s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
? 4.6
? 3.3
? 5.8
A
3
T A = 25 ° C
W
Power Dissipation Steady P D 0.97
(Note 1) State
t v 5s 1.6
Pulsed Drain Current t p = 10 m s I DM ? 9.2 A
Operating Junction and Storage Temperature T J , ? 55 to ° C
T STG 150
Source Current (Body Diode) I S ? 1.0 A
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 in sq pad size (Cu area = 1 in sq
[2 oz] including traces)
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
(Cu area = 0.0751 in sq)
THERMAL RESISTANCE MAXIMUM RATINGS
4
MARKING
DIAGRAM
1
TSOP ? 6
CASE 318G AA M G
STYLE 1 G
1
AA = Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Drain Drain Source
6 5 4
Parameter
Junction ? to ? Ambient – Steady State (Note 1)
Symbol
R q JA
Value
128
Unit
Junction ? to ? Ambient – t = 5 s (Note 1)
Junction ? to ? Ambient – Steady State (Note 2)
R q JA
R q JA
78
188
° C/W
1 2 3
Drain Drain Gate
ORDERING INFORMATION
Device
NTGS1135PT1G
Package
TSOP ? 6
Shipping ?
3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2008
October, 2008 ? Rev. 0
1
Publication Order Number:
NTGS1135P/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGS3130N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 5.6 A Single N-Channel, TSOP-6 |
| NTGS3130NT1G | 功能描述:MOSFET POWER MOSFET 20V 5.6A SNGL CH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3136P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -5.8 A, Single P-Channel, TSOP-6 |
| NTGS3136PT1G | 功能描述:MOSFET PFET TSOP6 20V/8V TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGS3433T1 | 功能描述:MOSFET -12V -3.3A P-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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