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| 型号： | NTGS1135PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 8V 4.6A 6-TSOP |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 8V |
| 电流 - 连续漏极(Id) @ 25° C： | 4.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 31 毫欧 @ 4.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 850mV @ 250µA |
| 闸电荷(Qg) @ Vgs： | 21nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 2200pF @ 6V |
| 功率 - 最大： | 970mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGS1135P
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage Tem-
perature Coefficient
Zero Gate Voltage Drain Current
Gate ? to ? Source Leakage Current
V (BR)DSS
V (BR)DSS /
T J
I DSS
I GSS
V GS = 0 V, I D = ? 250 m A
I D = ? 250 m A, Ref to 25 ° C
V GS = 0 V, V DS = ? 6 V
V DS = 0 V, V GS = ± 6 V
? 8.0
? 8.4
? 1.0
$ 100
V
mV/ ° C
m A
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = ? 250 m A
? 0.35
? 0.57
? 0.85
V
Negative Threshold Temperature
Coefficient
V GS(TH) /
T J
2.8
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V, I D = ? 4.6 A
22
31
m W
V GS = ? 2.5 V, I D = ? 2.5 A
V GS = ? 1.8 V, I D = ? 2.0 A
V GS = ? 1.5 V, I D = ? 1.0 A
V GS = ? 1.2 V, I D = ? 0.1 A
28
37
47
100
38
57
73
300
Forward Transconductance
g FS
V DS = ? 4.0 V, I D = ? 3.0 A
1.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
C ISS
2200
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1 MHz, V DS = ? 6.0 V
400
200
Total Gate Charge
Q G(TOT)
21
nC
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
Q G(TH)
Q GS
Q GD
V GS = ? 4.5 V, V DS = ? 8.0 V;
I D = ? 2.5 A
0.9
2.8
3.9
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
10
ns
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DS = ? 8.0 V,
I D = ? 2.5 A, R G = 6.2 W
16
128
71
DRAIN ? SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
I S = ? 1.0 A
T J = 25 ° C
? 0.6
? 1.0
V
Reverse Recovery Time
t RR
25
ns
Charge Time
Discharge Time
t a
t b
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = ? 1.0 A
11
14
Reverse Recovery Charge
Q RR
13
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%
4. Switching characteristics are independent of operating junction temperatures
http://onsemi.com
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