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| 型号： | NTGD4169FT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 2.6A 6-TSOP |
| 产品变化通告： | Product Obsolescence 21/Jan/2010 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 295pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD4169F
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
30
21.4
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 24 V
T J = 25 ° C
T J = 85 ° C
1.0
10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.5
0.9
1.5
V
Gate Threshold Temperature Coefficient
V GS(TH) /T J
? 3.4
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = 4.5 V
V GS = 2.5 V
I D = 2.6 A
I D = 2.2 A
52
67
90
125
m W
Forward Transconductance
g FS
V DS = 15 V, I D = 2.6 A
2.6
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = 15 V
V GS = 4.5 V, V DS = 15 V,
I D = 2.0 A
295
48
27
3.7
0.6
0.9
0.8
5.5
pF
nC
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
7.0
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 15 V,
I D = 1.0 A, R G = 6.0 W
4.0
14
2.0
ns
DRAIN ? TO ? SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
IS = 0.9 A
T J = 25 ° C
0.7
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
IS = 0.9 A
8.0
5.0
3.0
3.0
ns
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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