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参数资料
| 型号： | NTGD4167CT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/10页 |
| 文件大小： | 0K |
| 描述： | MOSFET N/P-CH 30V DUAL 6-TSOP |
| 标准包装： | 1 |
| FET 型： | N 和 P 沟道 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.6A，1.9A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 90 毫欧 @ 2.6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 295pF @ 15V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | NTGD4167CT1GOSDKR |
NTGD4167C
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Parameter
Symbol
N/P
Test Conditions
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
N
P
N
P
V GS = 0 V
I D = 250 m A
I D = ? 250 m A
30
? 30
21.4
22.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
N
P
V GS = 0 V, V DS = 24 V
V GS = 0 V, V DS = ? 24 V
T J = 25 ° C
1.0
? 1.0
m A
N
P
V GS = 0 V, V DS = 24 V
V GS = 0 V, V DS = ? 24 V
T J = 85 ° C
10
? 10
Gate ? to ? Source Leakage Current
I GSS
N
V DS = 0 V, V GS = ± 12 V
± 100
nA
ON CHARACTERISTICS (Note 2)
P
V DS = 0 V, V GS = ± 12 V
± 100
Gate Threshold Voltage
V GS(TH)
N
P
V GS = V DS
I D = 250 m A
I D = ? 250 m A
0.5
? 0.5
0.9
? 1.1
1.5
? 1.5
V
Drain ? to ? Source On Resistance
R DS(on)
N
P
V GS = 4.5 V , I D = 2.6 A
V GS = 2.5 V , I D = 2.2 A
V GS = ? 4.5 V , I D = ? 1.9 A
52
67
130
90
125
170
m W
V GS = ? 2.5 V, I D = ? 1.0 A
202
300
Forward Transconductance
g FS
N
V DS = 15 V, I D = 2.6 A
2.6
S
CHARGES AND CAPACITANCES
P
V DS = ? 15 V , I D = ? 1.9 A
2.6
Input Capacitance
C ISS
295
Output Capacitance
C OSS
N
V DS = 15 V
48
Reverse Transfer Capacitance
Input Capacitance
C RSS
C ISS
f = 1 MHz, V GS = 0 V
27
419
pF
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Gate Charge
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
P
N
V DS = ? 15 V
V GS = 4.5 V, V DS = 15 V, I D = 2.0 A
51
26
3.7
0.6
0.9
5.5
Gate ? to ? Drain “Miller” Charge
Total Gate Charge
Q GD
Q G(TOT)
0.8
3.9
6.0
nC
Threshold Gate Charge
Gate ? to ? Source Gate Charge
Gate ? to ? Drain “Miller” Charge
Q G(TH)
Q GS
Q GD
P
V GS = ? 4.5 V, V DS = ? 15 V, I D = ? 2.0 A
0.6
1.0
1.0
SWITCHING CHARACTERISTICS (Note 3)
Turn ? On Delay Time
t d(ON)
7.0
ns
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
t d(ON)
t r
t d(OFF)
t f
N
P
V GS = 4.5 V, V DD = 15 V,
I D = 1.0 A, R G = 6.0 W
V GS = ? 4.5 V, V DD = ? 15 V,
I D = ? 1.0 A, R G = 6.0 W
4.0
14
2.0
8.0
8.0
22
8.0
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
http://onsemi.com
2
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