- 您现在的位置：买卖IC网 > Datasheet目录488 > NTGD3148NT1G (ON Semiconductor)MOSFET N-CH DUAL 20V 3.5A 6TSOP Datasheet资料下载
参数资料
| 型号： | NTGD3148NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH DUAL 20V 3.5A 6TSOP |
| 标准包装： | 1 |
| FET 型： | 2 个 N 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 70 毫欧 @ 3.5A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 3.8nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 300pF @ 10V |
| 功率 - 最大： | 900mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 标准包装 |
| 其它名称： | NTGD3148NT1GOSDKR |
NTGD3148N
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
I D = 250 m A, Ref to 25 ° C
20
12.5
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = 16 V
T J = 25 ° C
T J = 125 ° C
1.0
10
m A
Gate-to-Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
100
nA
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
V GS(TH)
V GS(TH) /T J
V GS = V DS , I D = 250 m A
0.5
3.28
1.5
V
mV/ ° C
Drain-to-Source On Resistance
R DS(on)
V GS = 4.5 V
V GS = 2.5 V
I D = 3.5 A
I D = 2.8 A
41.7
58
70
100
m W
Forward Transconductance
g FS
V DS = 5.0 V, I D = 3.5 A
6.2
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Gate Resistance
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
RG
V GS = 0 V, f = 1.0 MHz,
V DS = 10 V
V GS = 4.5 V, V DS = 10 V,
I D = 3.5 A
300
73
44
3.8
0.3
0.7
1.1
2.8
pF
nC
W
SWITCHING CHARACTERISTICS (Note 3)
Turn-On Delay Time
t d(ON)
7.4
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DS = 10 V,
I D = 3.5 A, R G = 3.0 W
11.2
12.8
1.6
ns
DRAIN-TO-SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I D = 0.8 A
T J = 25 ° C
T J = 125 ° C
0.71
0.57
V
Reverse Recovery Time
t RR
9.0
Charge Time
Discharge Time
Reverse Recovery Time
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = 0.8 A
5.0
4.0
2.5
ns
nC
2. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NTGD3148NT1G
Package
TSOP-6
Shipping ?
3000 / Tape & Reel
(Pb-Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| NTGD3149CT1G | MOSFET COMPL 20V DUAL 6-TSOP |
| NTGD4161PT1G | MOSFET P-CH DUAL 30V 2.3A 6-TSOP |
| NTGD4167CT1G | MOSFET N/P-CH 30V DUAL 6-TSOP |
| NTGD4169FT1G | MOSFET N-CH 30V 2.6A 6-TSOP |
| NTGS1135PT1G | MOSFET P-CH 8V 4.6A 6-TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGD3149C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual |
| NTGD3149CT1G | 功能描述:MOSFET COMP TSOP6 20V 3A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGD4161P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 |
| NTGD4161P_06 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -30 V, -2.3 A, Dual P-Channel, TSOP-6 |
| NTGD4161PT1G | 功能描述:MOSFET PFET TSOP6 20V 2.3A 160mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。