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| 型号： | NTGD4161PT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH DUAL 30V 2.3A 6-TSOP |
| 产品变化通告： | Product Discontinuation 30/Sept/2011 |
| 标准包装： | 3,000 |
| FET 型： | 2 个 P 沟道（双） |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.5A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 160 毫欧 @ 2.1A，10V |
| Id 时的 Vgs(th)（最大）： | 3V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 7.1nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 281pF @ 15V |
| 功率 - 最大： | 600mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD4161P
Power MOSFET
?30 V, ?2.3 A, Dual P?Channel, TSOP?6
Features
? Fast Switching Speed
? Low Gate Charge
? Low R DS(on)
? Independently Connected Devices to Provide Design Flexibility
? This is a Pb?Free Device
V (BR)DSS
http://onsemi.com
R DS(on) Max
Applications
? Load Switch
? Battery Protection
? Portable Devices Like PDAs, Cellular Phones and Hard Drives
?30 V
P?Channel
160 m W @ ?10 V
280 m W @ ?4.5 V
P?Channel
(MOSFET1)
(MOSFET2)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
D1
D2
Parameter
Drain?to?Source Voltage
Gate?to?Source Voltage
Symbol
V DSS
V GS
Value
?30
± 20
Unit
V
V
Continuous Drain
Current (Note 1)
Power Dissipation
Steady
State
t ≤ 5s
Steady
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
?2.1
?1.5
?2.3
1.1
A
W
G1
S1
G2
S2
(Note 1)
State
t ≤ 5s
1.3
MARKING DIAGRAM
Continuous Drain
Current (Note 2)
Power Dissipation (Note 2)
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
?1.5
?1.1
0.6
A
W
1
TSOP?6
D1 S1 D2
S8 M G
G
Pulsed Drain Current t p = 10 m s
Operating Junction and Storage Temperature
I DM
T J ,
?10
?55 to
A
° C
CASE 318G
STYLE 13
G1 S2 G2
T STG
150
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I S
T L
?0.8
260
A
° C
S8
M
G
= Specific Device Code
= Date Code*
= Pb?Free Package
(Note: Microdot may be in either location)
THERMAL RESISTANCE RATINGS
*Date Code orientation may vary depending upon
Parameter
Junction?to?Ambient ? Steady State (Note 1)
Junction?to?Ambient ? Steady State (Note 2)
Symbol
R q JA
Max
115
225
Unit
° C/W
manufacturing location.
ORDERING INFORMATION
Junction?to?Ambient ? t ≤ 5 s (Note 1)
95
Device
Package
Shipping ?
Junction?to?Case ? Steady State (Note 1)
R q JC
40
NTGD4161PT1G
TSOP?6
3000 / Tape & Reel
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 in. pad size
(Cu. area = 1.2 in 2 [1 oz] including traces)
2. When surface mounted to an FR4 board using minimum recommended
pad size (Cu. area = 0.047 in 2 )
(Pb?Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2006
September, 2006 ? Rev. 1
1
Publication Order Number:
NTGD4161P/D
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