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参数资料
| 型号： | NTF6P02T3G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET PWR P-CHAN 10A 20V SOT223 |
| 产品变化通告： | Reactivation Notice 08/Apr/2011 Product Obsolescence 14/Apr/2010 |
| 标准包装： | 1 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 10A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 50 毫欧 @ 6A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 20nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 1200pF @ 16V |
| 功率 - 最大： | 8.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 剪切带 (CT) |
| 其它名称： | NTF6P02T3GOSCT |
NTF6P02, NVF6P02
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 4)
(V GS = 0 Vdc, I D = ? 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = ? 20 Vdc, V GS = 0 Vdc)
(V DS = ? 20 Vdc, V GS = 0 Vdc, T J = 125 ° C)
Gate ? Body Leakage Current
(V GS = ± 8.0 Vdc, V DS = 0 Vdc)
V (BR)DSS
I DSS
I GSS
? 20
?
?
?
?
? 25
? 11
?
?
?
?
?
? 1.0
? 10
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage (Note 4)
(V DS = V GS , I D = ? 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 4)
(V GS = ? 4.5 Vdc, I D = ? 6.0 Adc)
(V GS = ? 2.5 Vdc, I D = ? 4.0 Adc)
(V GS = ? 2.5 Vdc, I D = ? 3.0 Adc)
Forward Transconductance (Note 4)
(V DS = ? 10 Vdc, I D = ? 6.0 Adc)
V GS(th)
R DS(on)
g fs
? 0.4
?
?
?
?
?
? 0.7
2.6
44
57
57
12
? 1.0
?
50
70
?
?
Vdc
mV/ ° C
m W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
Input Capacitance
Output Capacitance
Transfer Capacitance
(V DS = ? 16 Vdc, V GS = 0 V,
f = 1.0 MHz)
(V DS = ? 10 Vdc, V GS = 0 V,
f = 1.0 MHz)
C iss
C oss
C rss
C iss
C oss
C rss
?
?
?
?
?
?
900
350
90
940
410
110
1200
500
150
?
?
?
pF
pF
SWITCHING CHARACTERISTICS (Note 5)
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Turn ? On Delay Time
Rise Time
Turn ? Off Delay Time
Fall Time
Gate Charge
(V DD = ? 5.0 Vdc, I D = ? 1.0 Adc,
V GS = ? 4.5 Vdc,
R G = 6.0 W )
(V DD = ? 16 Vdc, I D = ? 6.0 Adc,
V GS = ? 4.5 Vdc,
R G = 2.5 W )
(V DS = ? 16 Vdc, I D = ? 6.0 Adc,
V GS = ? 4.5 Vdc) (Note 4)
t d(on)
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
Q T
Q gs
?
?
?
?
?
?
?
?
?
?
7.0
25
75
50
8.0
30
60
60
15
1.7
12
45
125
85
?
?
?
?
20
?
ns
ns
nC
Q gd
?
6.0
?
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
(I S = ? 3.0 Adc, V GS = 0 Vdc) (Note 4)
(I S = ? 2.1 Adc, V GS = 0 Vdc)
(I S = ? 3.0 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = ? 3.0 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 4)
V SD
t rr
t a
?
?
?
?
?
? 0.82
? 0.74
? 0.68
42
17
? 1.2
?
?
?
?
Vdc
ns
t b
?
25
?
Reverse Recovery Stored Charge
Q RR
?
0.036
?
m C
4. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2.0%.
5. Switching characteristics are independent of operating junction temperatures.
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