参数资料
型号: NTF6P02T3G
厂商: ON Semiconductor
文件页数: 4/6页
文件大小: 0K
描述: MOSFET PWR P-CHAN 10A 20V SOT223
产品变化通告: Reactivation Notice 08/Apr/2011
Product Obsolescence 14/Apr/2010
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 10A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 6A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 4.5V
输入电容 (Ciss) @ Vds: 1200pF @ 16V
功率 - 最大: 8.3W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 剪切带 (CT)
其它名称: NTF6P02T3GOSCT
NTF6P02, NVF6P02
TYPICAL ELECTRICAL CHARACTERISTICS
3000
2400
1800
1200
C iss
C rss
V DS = 0 V V GS = 0 V
C iss
T J = 25 ° C
5
4
3
2
? V DS
Q gs
Q gd
Q T
? V GS
20
16
12
8
600
C oss
C rss
1
I D = ? 6.0 A
T J = 25 ° C
4
0
10
5 ? V GS 0 ? V DS 5
10
15
20
0
0
4
8
12
16
0
GATE ? TO ? SOURCE OR DRAIN ? TO ? SOURCE VOLTAGE
(VOLTS)
Figure 7. Capacitance Variation
Q g , TOTAL GATE CHARGE (nC)
Figure 8. Gate ? to ? Source and
Drain ? to ? Source Voltage versus Total Charge
1000
100
10
V DD = ? 16 V
I D = ? 3.0 A
V GS = ? 4.5 V
t d(off)
t f
t r
t d(on)
7
6
5
4
3
2
V GS = 0 V
T J = 25 ° C
1
1
1
10
100
0
0.3
0.6
0.9
1.2
R G , GATE RESISTANCE ( W )
Figure 9. Resistive Switching Time Variation
? V SD , SOURCE ? TO ? DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage versus Current
versus Gate Resistance
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