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| 型号： | NTGD3147FT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.2A 6-TSOP |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 145 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD3147F
Power MOSFET and
Schottky Diode
? 20 V, ? 2.5 A, P ? Channel with Schottky
Barrier Diode, TSOP ? 6
Features
? Fast Switching
? Low Gate Change
? Low R DS(on)
? Low V F Schottky Diode
? Independently Connected Devices to Provide Design Flexibility
? This is a Pb ? Free Device
Applications
? DC ? DC Converters
? Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
V (BR)DSS
? 20 V
V R Max
20 V
http://onsemi.com
P ? CHANNEL MOSFET
R DS(on) Max
145 m W @ ? 4.5 V
200 m W @ ? 2.5 V
SCHOTTKY DIODE
V F Max
0.45 V
A
D
I D Max
? 2.2 A
? 1.6 A
I F Max
1.0 A
Parameter
Drain ? to ? Source Voltage
Symbol
V DSS
Value
? 20
Unit
V
Gate ? to ? Source Voltage
V GS
± 12
V
G
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady State
t ≤ 5 s
Steady State
t ≤ 5 s
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
I D
P D
? 2.2
? 1.6
? 2.5
1.0
1.3
A
W
S
P ? Channel MOSFET
K
Schottky Diode
TC M G
G
Pulsed Drain Current t p = 10 m s I DM ? 7.5 A
Operating Junction and Storage Temperature T J , T STG ? 25 to ° C
150
Source Current (Body Diode) I S ? 0.8 A
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8 ″ from case for 10 s)
SCHOTTKY MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter Symbol Value Unit
Peak Repetitive Reverse Voltage V RRM 20 V
DC Blocking Voltage V R 20 V
MARKING
DIAGRAM
1
TSOP ? 6
CASE 318G
STYLE 15
1
TC = Specific Device Code
M = Date Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
Average Rectified Forward Current
THERMAL RESISTANCE RATINGS
I F
1
A
PIN CONNECTION
Parameter
Junction ? to ? Ambient – Steady ? State (Note 1)
Junction ? to ? Ambient – t ≤ 5 s (Note 1)
Junction ? to ? Ambient Steady ? State (Note 2)
Symbol
R q JA
R q JA
R q JA
Value
125
100
235
Unit
° C/W
° C/W
° C/W
A
S
1
2
6
5
K
N/C
D
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size
(Cu area = 30 mm 2 [2 oz] including traces).
G 3 4
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
? Semiconductor Components Industries, LLC, 2008
May, 2008 ? Rev. 0
1
Publication Order Number:
NTGD3147F/D
相关PDF资料 |
PDF描述 |
|---|---|
| NTGD3148NT1G | MOSFET N-CH DUAL 20V 3.5A 6TSOP |
| NTGD3149CT1G | MOSFET COMPL 20V DUAL 6-TSOP |
| NTGD4161PT1G | MOSFET P-CH DUAL 30V 2.3A 6-TSOP |
| NTGD4167CT1G | MOSFET N/P-CH 30V DUAL 6-TSOP |
| NTGD4169FT1G | MOSFET N-CH 30V 2.6A 6-TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGD3148 | 制造商:ON Semiconductor 功能描述:MOSFET NN CH 20V 3.5A 6TSOP 制造商:ON Semiconductor 功能描述:MOSFET, NN CH, 20V, 3.5A, 6TSOP |
| NTGD3148N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 |
| NTGD3148NT1G | 功能描述:MOSFET NFET 20V 3A 70MOHM TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGD3149C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual |
| NTGD3149CT1G | 功能描述:MOSFET COMP TSOP6 20V 3A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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