参数资料
型号: NTGD3147FT1G
厂商: ON Semiconductor
文件页数: 6/7页
文件大小: 0K
描述: MOSFET P-CH 20V 2.2A 6-TSOP
产品变化通告: Product Obsolescence 01/Jul/2009
标准包装: 3,000
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 二极管(隔离式)
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 2.2A
开态Rds(最大)@ Id, Vgs @ 25° C: 145 毫欧 @ 2.2A,4.5V
Id 时的 Vgs(th)(最大): 1.5V @ 250µA
闸电荷(Qg) @ Vgs: 5.5nC @ 4.5V
输入电容 (Ciss) @ Vds: 400pF @ 10V
功率 - 最大: 1W
安装类型: 表面贴装
封装/外壳: SC-74,SOT-457
供应商设备封装: 6-TSOP
包装: 带卷 (TR)
NTGD3147F
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
10
100
1000
t, TIME (s)
Figure 13. Thermal Response
TYPICAL SCHOTTKY CHARACTERISTICS
10
100
10
T J = 125 ° C
1
T J = 125 ° C
75 ° C
1
0.1
0.01
T J = 75 ° C
T J = 25 ° C
0.1
0
0.1
25 ° C ? 55 ° C
0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.9
0.001
0
5
10
15
20
V F , INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 14. Typical Forward Voltage
ORDERING INFORMATION
V R , REVERSE VOLTAGE (V)
Figure 15. Typical Reverse Current
Device
NTGD3147FT1G
Package
TSOP ? 6
(Pb ? Free)
Shipping ?
3000 / Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
6
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NTGD3149C 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
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