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| 型号： | NTGD3147FT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 20V 2.2A 6-TSOP |
| 产品变化通告： | Product Obsolescence 01/Jul/2009 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 二极管（隔离式） |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2.2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 145 毫欧 @ 2.2A，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 5.5nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 400pF @ 10V |
| 功率 - 最大： | 1W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74，SOT-457 |
| 供应商设备封装： | 6-TSOP |
| 包装： | 带卷 (TR) |
NTGD3147F
MOSFET ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage
Drain ? to ? Source Breakdown Voltage
Temperature Coefficient
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
? 20
14.2
V
mV/ ° C
Zero Gate Voltage Drain Current
I DSS
V GS = 0 V,
V DS = ? 16 V
T J = 25 ° C
T J = 85 ° C
? 1.0
? 10
m A
Gate ? to ? Source Leakage Current
I GSS
V DS = 0 V, V GS = ± 12 V
± 100
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = ? 250 m A
? 0.5
? 0.95
? 1.5
V
Gate Threshold Temperature Coefficient
V GS(TH) /T J
3.0
mV/ ° C
Drain ? to ? Source On Resistance
R DS(on)
V GS = ? 4.5 V
V GS = ? 2.5 V
I D = ? 2.2 A
I D = ? 1.6 A
90
140
145
200
m W
Forward Transconductance
g FS
V DS = ? 5.0 V, I D = ? 2.2 A
4.5
S
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate ? to ? Source Charge
Gate ? to ? Drain Charge
C ISS
C OSS
C RSS
Q G(TOT)
Q G(TH)
Q GS
Q GD
V GS = 0 V, f = 1.0 MHz,
V DS = ? 10 V
V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 2.2 A
400
75
40
3.8
0.5
0.9
1.0
5.5
pF
nC
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(ON)
7.5
Rise Time
Turn ? Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = ? 4.5 V, V DS = ? 10 V,
I D = ? 1.0 A, R G = 6.0 W
6.2
14.5
18.4
ns
DRAIN ? TO ? SOURCE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V
I D = ? 0.8 A
T J = 25 ° C
? 0.8
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Time
t RR
T a
T b
Q RR
V GS = 0 V, d IS /d t = 100 A/ m s,
I S = ? 0.8 A
12
8.0
4.0
4.0
ns
nC
3. Pulse Test: pulse width v 300 m s, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
http://onsemi.com
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相关PDF资料 |
PDF描述 |
|---|---|
| NTGD3148NT1G | MOSFET N-CH DUAL 20V 3.5A 6TSOP |
| NTGD3149CT1G | MOSFET COMPL 20V DUAL 6-TSOP |
| NTGD4161PT1G | MOSFET P-CH DUAL 30V 2.3A 6-TSOP |
| NTGD4167CT1G | MOSFET N/P-CH 30V DUAL 6-TSOP |
| NTGD4169FT1G | MOSFET N-CH 30V 2.6A 6-TSOP |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTGD3148 | 制造商:ON Semiconductor 功能描述:MOSFET NN CH 20V 3.5A 6TSOP 制造商:ON Semiconductor 功能描述:MOSFET, NN CH, 20V, 3.5A, 6TSOP |
| NTGD3148N | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 |
| NTGD3148NT1G | 功能描述:MOSFET NFET 20V 3A 70MOHM TSOP6 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTGD3149C | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual |
| NTGD3149CT1G | 功能描述:MOSFET COMP TSOP6 20V 3A TR RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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