参数资料
型号: NTF6P02T3G
厂商: ON Semiconductor
文件页数: 6/6页
文件大小: 0K
描述: MOSFET PWR P-CHAN 10A 20V SOT223
产品变化通告: Reactivation Notice 08/Apr/2011
Product Obsolescence 14/Apr/2010
标准包装: 1
FET 型: MOSFET P 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 10A
开态Rds(最大)@ Id, Vgs @ 25° C: 50 毫欧 @ 6A,4.5V
Id 时的 Vgs(th)(最大): 1V @ 250µA
闸电荷(Qg) @ Vgs: 20nC @ 4.5V
输入电容 (Ciss) @ Vds: 1200pF @ 16V
功率 - 最大: 8.3W
安装类型: 表面贴装
封装/外壳: TO-261-4,TO-261AA
供应商设备封装: SOT-223
包装: 剪切带 (CT)
其它名称: NTF6P02T3GOSCT
NTF6P02, NVF6P02
PACKAGE DIMENSIONS
SOT ? 223 (TO ? 261)
CASE 318E ? 04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
0.08 (0003)
H E
e1
1
A1
e
4
2
3
E
b
A
L
q
L1
C
DIM
A
A1
b
b1
c
D
E
e
e1
L
L1
H E
q
STYLE 3:
PIN 1.
2.
3.
4.
MIN
1.50
0.02
0.60
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0 °
GATE
DRAIN
SOURCE
DRAIN
NOM MAX
1.63 1.75
0.06 0.10
0.75 0.89
3.06 3.20
0.29 0.35
6.50 6.70
3.50 3.70
2.30 2.40
0.94 1.05
??? ???
1.75 2.00
7.00 7.30
? 1 0 °
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0 °
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
???
0.069
0.276
?
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
???
0.078
0.287
1 0 °
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.0
0.079
1.5
0.059
2.3
0.091
2.3
0.091
SCALE 6:1
6.3
0.248
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
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NTF6P02T3/D
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