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| 型号： | NTF3055L175T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 2A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 Product Discontinuation 20/Aug/2008 |
| 标准包装： | 1,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 175 毫欧 @ 1A，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 10nC @ 5V |
| 输入电容 (Ciss) @ Vds： | 270pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTF3055L175T1OS |
NTF3055L175
Power MOSFET
2.0 A, 60 V, Logic Level
N ? Channel SOT ? 223
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
? This is a Pb ? Free Device
Applications
http://onsemi.com
2.0 AMPERES, 60 VOLTS
R DS(on) = 175 m W
N ? Channel
D
?
?
?
?
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
G
S
MAXIMUM RATINGS (T C = 25 ° C unless otherwise noted)
Rating
Symbol
Value
Unit
4
SOT ? 223
Drain ? to ? Source Voltage
Drain ? to ? Gate Voltage (R GS = 1.0 M W )
V DSS
V DGR
60
60
Vdc
Vdc
1
2
3
CASE 318E
STYLE 3
Gate ? to ? Source Voltage
Continuous
Non ? repetitive (t p ≤ 10 ms)
Drain Current
Continuous @ T A = 25 ° C
Continuous @ T A = 100 ° C
Single Pulse (t p ≤ 10 m s)
Total Power Dissipation @ T A = 25 ° C (Note 1)
Total Power Dissipation @ T A = 25 ° C (Note 2)
Derate above 25 ° C
Operating and Storage Temperature Range
Single Pulse Drain ? to ? Source Avalanche
Energy ? Starting T J = 25 ° C
(V DD = 25 Vdc, V GS = 5.0 Vdc,
I L(pk) = 3.6 A, L = 10 mH, V DS = 60 Vdc)
Thermal Resistance
Junction ? to ? Ambient (Note 1)
Junction ? to ? Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8 ″ from case for 10 seconds
V GS
I D
I D
I DM
P D
T J , T stg
E AS
R q JA
R q JA
T L
± 15
± 20
2.0
1.2
6.0
2.1
1.3
0.014
? 55 to 175
65
72.3
114
260
Vdc
Vpk
Adc
Apk
W
W
W/ ° C
° C
mJ
° C/W
° C
MARKING DIAGRAM
AYW
5L175 G
G
1
A = Assembly Location
Y = Year
W = Work Week
5L175 = Device Code
G = Pb ? Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
4 Drain
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using 1 ″ pad size, 1 oz.
(Cu. Area 0.995 in 2 ).
2. When surface mounted to an FR4 board using minimum recommended pad
size, 2 ? 2.4 oz. (Cu. Area 0.272 in 2 ).
1 2 3
Gate Drain Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
? Semiconductor Components Industries, LLC, 2011
October, 2011 ? Rev. 4
1
Publication Order Number:
NTF3055L175/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTF3055L175T1G | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTF3055L175T3 | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTF3055L175T3G | 功能描述:MOSFET 60V 2A N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTF3055L175T3LF | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTF3055L175T3LFG | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 A, 60 V, Logic Level |
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