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参数资料
| 型号： | NTF3055-100T3LF |
| 厂商： | ON Semiconductor |
| 文件页数： | 6/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 60V 3A SOT223 |
| 产品变化通告： | Specification Change MSL Updated 2/April/2007 |
| 标准包装： | 4,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 60V |
| 电流 - 连续漏极(Id) @ 25° C： | 3A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 110 毫欧 @ 1.5A，10V |
| Id 时的 Vgs(th)（最大）： | 4V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 22nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 455pF @ 25V |
| 功率 - 最大： | 1.3W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-261-4，TO-261AA |
| 供应商设备封装： | SOT-223 |
| 包装： | 带卷 (TR) |
| 其它名称： | NTF3055-100T3LFOS |
NTF3055 ? 100, NVF3055 ? 100
PACKAGE DIMENSIONS
SOT ? 223 (TO ? 261)
CASE 318E ? 04
ISSUE N
D
b1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
H E
1
4
2
3
E
DIM
A
A1
b
MIN
1.50
0.02
0.60
MILLIMETERS
NOM MAX
1.63 1.75
0.06 0.10
0.75 0.89
MIN
0.060
0.001
0.024
INCHES
NOM
0.064
0.002
0.030
MAX
0.068
0.004
0.035
e1
e
b
A
q
C
b1
c
D
E
e
e1
L
L1
H E
q
2.90
0.24
6.30
3.30
2.20
0.85
0.20
1.50
6.70
0 °
3.06 3.20
0.29 0.35
6.50 6.70
3.50 3.70
2.30 2.40
0.94 1.05
??? ???
1.75 2.00
7.00 7.30
? 1 0 °
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0 °
0.121
0.012
0.256
0.138
0.091
0.037
???
0.069
0.276
?
0.126
0.014
0.263
0.145
0.094
0.041
???
0.078
0.287
1 0 °
0.08 (0003)
A1
L
L1
STYLE 3:
PIN 1.
2.
GATE
DRAIN
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
3.
4.
SOURCE
DRAIN
2.0
0.079
1.5
0.059
2.3
0.091
2.3
0.091
SCALE 6:1
6.3
0.248
mm
inches
*For additional information on our Pb ? Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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NTF3055 ? 100/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTF3055-160 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 2.0 Amps, 60 Volts N-Channel SOT-223 |
| NTF3055-160T1 | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTF3055-160T3 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTF3055-160T3LF | 功能描述:MOSFET N-CH 60V 2A SOT223 RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTF3055L108 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 |
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