参数资料
型号: NTD95N02RT4G
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH 24V 12A DPAK
产品变化通告: Product Obsolescence 07/Jul/2010
标准包装: 2,500
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 24V
电流 - 连续漏极(Id) @ 25° C: 12A
开态Rds(最大)@ Id, Vgs @ 25° C: 5 毫欧 @ 20A,10V
Id 时的 Vgs(th)(最大): 2V @ 250µA
闸电荷(Qg) @ Vgs: 21nC @ 4.5V
输入电容 (Ciss) @ Vds: 2400pF @ 20V
功率 - 最大: 1.25W
安装类型: 表面贴装
封装/外壳: TO-252-3,DPak(2 引线+接片),SC-63
供应商设备封装: D-Pak
包装: 带卷 (TR)
NTD95N02R
TYPICAL CHARACTERISTICS
200
180
160
140
120
100
80
60
40
V GS = 10 V
7.0 V
5.0 V
T J = 25 ° C
4.2 V
4.0 V
3.6 V
3.4 V
3.2 V
3.0 V
2.8 V
220
200
180
160
140
120
100
80
60
40
V DS w 10 V
T J = 100 ° C
T J = 25 ° C
20
0
0
1
2
3
4
5
6
7
8
2.6 V
2.4 V
9
10
20
0
0
1
2
T J = ?55 ° C
3
4
5
6
0.009
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 1. On?Region Characteristics
0.016
V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
0.008
I D = 95 A
T J = 25 ° C
0.014
T J = 25 ° C
0.012
0.007
0.010
0.006
0.005
0.004
0.008
0.006
0.004
V GS = 4.5 V
V GS = 10 V
0.003
3
4
5
6
7
8
9
10
0.002
10
30
50
70
90
110
130
150
170
1.8
V GS , GATE?TO?SOURCE VOLTAGE (V)
Figure 3. On?Resistance versus
Gate?to?Source Voltage
100000
I D , DRAIN CURRENT (A)
Figure 4. On?Resistance versus Drain Current
and Gate Voltage
1.6
1.4
1.2
1.0
I D = 95 A
V GS = 10 V
10000
1000
V GS = 0 V
T J = 150 ° C
T J = 100 ° C
0.8
0.6
100
?50
?25
0
25
50
75
100
125
150
2
4
6
8
10
12
14
16
18
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
V DS , DRAIN?TO?SOURCE VOLTAGE (V)
Figure 6. Drain?to?Source Leakage Current
versus Voltage
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