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| 型号： | NTDV5804NT4G |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 40V 69A DPAK |
| 标准包装： | 2,500 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 40V |
| 电流 - 连续漏极(Id) @ 25° C： | 69A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 8.5 毫欧 @ 30A，10V |
| Id 时的 Vgs(th)（最大）： | 3.5V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 45nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 2850pF @ 25V |
| 功率 - 最大： | 71W |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 带卷 (TR) |
NTD5804N, NTDV5804N
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D ? 01
ISSUE C
V
B
R
C
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
S
1
4
2
3
A
Z
DIM
A
B
C
D
INCHES
MIN MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
MILLIMETERS
MIN MAX
5.97 6.35
6.35 6.73
2.19 2.38
0.69 0.88
? T ?
SEATING
PLANE
F
G
K
J
D 3 PL
0.13 (0.005)
M
T
H
E 0.018 0.023
F 0.037 0.045
G 0.090 BSC
H 0.034 0.040
J 0.018 0.023
K 0.350 0.380
R 0.180 0.215
S 0.025 0.040
V 0.035 0.050
Z 0.155 ???
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.46 0.58
0.94 1.14
2.29 BSC
0.87 1.01
0.46 0.58
8.89 9.65
4.45 5.45
0.63 1.01
0.89 1.27
3.93 ???
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NTD5804N/D
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相关代理商/技术参数 |
参数描述 |
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| NTDV5805NT4G | 功能描述:MOSFET NFET 40V 51A 9.5MOHM RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTDV6414ANT4G | 功能描述:MOSFET N-CH 100V 32A DPAK RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:* 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| NTE | 制造商:CANDD 制造商全称:C&D Technologies 功能描述:Isolated 1W Single Output SM DC/DC Converters |
| NTE 110A | 制造商:NTE Electronics 功能描述: |
| NTE 123 A | 制造商:NTE Electronics 功能描述:Bulk |
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