- 您现在的位置：买卖IC网 > PDF目录363675 > NTE126 (NTE Electronics, Inc.) Germanium Mesa Transistor, PNP, for High-Speed Switching Applications PDF资料下载
参数资料
| 型号： | NTE126 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Germanium Mesa Transistor, PNP, for High-Speed Switching Applications |
| 中文描述： | 梅萨锗晶体管，进步党高，高速转换应用 |
| 文件页数： | 2/2页 |
| 文件大小： | 21K |
| 代理商： | NTE126 |
Electrical Characteristics (Cont
’
d):
(T
A
= 25
°
C)
Parameter
Symbol
Min
Max
Unit
Base
–
Emitter Saturation Voltage
(I
C
= 10mAdc, I
B
= 1mAdc)
(I
C
= 50mAdc, I
B
= 5mAdc)
(I
C
= 100mAdc, I
B
= 10mAdc)
Current
–
Gain
–
Bandwidth Product
(I
E
= 20mAdc, V
CB
= 1.0Vdc, f = 100MHz)
Output Capacitance
(V
CB
= 10Vdc, I
E
= 0, f = 1MHz)
Emitter Transition Capacitance
(V
EB
= 1Vdc)
Turn
–
On Time
(I
C
= 10mAdc, I
B1
= 5mAdc, V
BE(off)
= 1.25Vdc)
(I
C
= 100mAdc, I
B1
= 5mAdc, V
BE(off)
= 1.25Vdc)
Turn
–
Off Time
(I
C
= 10mAdc, I
B1
= 1mAdc, I
B2
= 0.25mAdc)
(I
C
= 100mAdc, I
B1
= 5mAdc, I
B2
= 1.25mAdc)
Total Control Charge
(I
C
= 10mAdc, I
B
= 1mAdc)
(I
C
= 100mAdc, I
B
= 5mAdc)
V
BE(sat)
0.30
0.40
0.40
0.50
0.75
1.00
Vdc
f
T
MHz
300
–
C
ob
–
4.0
pF
C
Te
–
3.5
pF
t
on
–
–
50
50
ns
t
off
–
–
85
85
ns
Q
T
–
–
80
125
pC
.210
(5.33)
Max
.500
(12.7)
Min
.230 (5.84) Dia Max
.195 (4.95) Dia Max
45
°
.041 (1.05)
Emitter
Base
Collector
.018 (0.45)
相关PDF资料 |
PDF描述 |
|---|---|
| NTE127 | Germanium PNP Transistor Horizontal Output Amplifier |
| NTE1285 | Integrated Circuit Audio Power Amplifier, 5.8W |
| NTE1286 | Integrated Circuit Audio Power Amplifier, 5.8W |
| NTE1289 | Integrated Circuit TV Vertical Deflection System |
| NTE128P | Silicon Complementary Transistors General Purpose Amp |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE1261 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Analog IC |
| NTE1263 | 制造商:NTE Electronics 功能描述:Integrated Circuit Record/Playback Circuit for VCR 16-Pin DIP |
| NTE1264 | 制造商:NTE Electronics 功能描述: |
| NTE1265 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Consumer IC |
| NTE1266 | 制造商:NTE 制造商全称:NTE Electronics 功能描述:Integrated Circuit Color AGC Circuit for VCR |
发布紧急采购，3分钟左右您将得到回复。