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参数资料
型号： NTE311
厂商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF
中文描述： 硅NPN晶体管倍频器，驱动器，高频/超高频
文件页数： 1/2页
文件大小： 21K
代理商： NTE311
NTE311
Silicon NPN Transistor
Frequency Multiplier, Driver, VHF/UHF
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collectore–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
C
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
30V
55V
3.5V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
400mA
5W
28.6mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
CER(sus)
V
CEO(sus)
V
(BR)EBO
I
CEO
I
CEX
I
C
= 5mA, R
BE
= 10
I
C
= 5mA, I
B
= 0
I
F
= 100
μ
A, I
C
= 0
V
CE
= 28V, I
B
= 0
V
CE
= 30V, V
BE
= –1.5V, T
C
= +200
°
C
V
CE
= 55V, V
BE
= –1.5V
V
BE
= 3.5V, I
C
= 0
55
–
–
V
Collector–Emitter Sustaining Voltage
30
–
–
V
Emitter–Base Breakdown Voltage
3.5
–
–
V
Collector Cutoff Current
––
–
0.02
mA
–
–
5.0
mA
–
–
0.1
mA
Emitter Cutoff Current
I
EBO
–
–
0.1
mA
ON Characteristics
DC Current Gain
h
FE
I
C
= 50mA, V
CE
= 5V
I
C
= 100mA, I
B
= 20mAQ
25
–
200
–
Collector–Emitter Saturation Voltage
V
CE(sat)
–
–
1.0
V
Small–Signal Characteristics
Current–Gain Bandwidth Product
f
T
I
C
= 50mA, V
CE
= 15V, f = 200MHz
V
CB
= 28V, I
E
= 0, f = 1MHz
800
–
–
MHz
Output Capacitance
C
obo
–
–
3.0
pF
Functional Test
Amplifier Power Gain
G
pe
h
V
CC
= 28V, P
OUT
= 1W, f = 400MHz
V
CC
= 20V, P
OUT
= 1W, f = 400MHz
10
–
–
dB
Collector Efficiency
45
–
–
%
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