- 您现在的位置：买卖IC网 > PDF目录363693 > NTE312 (NTE Electronics, Inc.) N-Channel Silicon Junction Field Effect Transistor PDF资料下载
参数资料
| 型号： | NTE312 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | N-Channel Silicon Junction Field Effect Transistor |
| 中文描述： | N沟道硅结型场效应晶体管 |
| 文件页数： | 2/3页 |
| 文件大小： | 24K |
| 代理商： | NTE312 |
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate
–
Source Breakdown Voltage
V
(BR)GSS
I
G
=
–
1.0
μ
A, V
DS
= 0
–
30
–
–
V
Gate Reverse Current
I
GSS
V
GS
=
–
20V, V
DS
= 0
V
G1S
=
–
20V, V
DS
= 0, T
A
= +100
°
C
–
–
–
1.0
nA
Gate 1 Leakage Current
I
G1SS
–
–
–
0.5
μ
A
Gate
–
Source Cutoff Voltage
V
GS(off)
V
DS
= 15V, I
D
= 10mA
–
1.0
–
–
6.0
V
ON Characteristics
Zero
–
Gate Voltage Drain Current
I
DSS
V
DS
= 15V, V
GS
= 0, Note 1
5.0
–
15
mA
Small
–
Signal Characteristics
Forward Transfer Admittance
|y
fs
|
V
DS
= 15V, V
GS
= 0, f = 1kHz
4500
–
7500
μ
mhos
Input Admittance
Re(y
is
)
100MHz
V
DS
= 15V, V
GS
= 0
–
–
100
μ
mhos
400MHz
–
–
1000
μ
mhos
Output Admittance
|y
os
|
V
DS
= 15V, V
GS
= 0, f = 1kHz
–
–
50
μ
mhos
Output Conductance
Re(y
os
)
100MHz
V
DS
= 15V, V
GS
= 0
–
–
75
μ
mhos
400MHz
–
–
100
μ
mhos
Forward Transconductance
Re(y
fs
)
V
DS
= 15V, V
GS
= 0, f = 400MHz
4000
–
–
μ
mhos
Input Capacitance
C
iss
V
DS
= 15V, V
GS
= 0, f = 1.0MHz
–
–
4.5
pF
Reverse Transfer Capacitance
C
rss
V
DS
= 15V, V
GS
= 0, f = 1.0MHz
–
–
1.0
pF
Input Susceptance
I
M
(Yis)
100MHz
V
DS
= 15V, V
GS
= 0
–
–
3.0
mmho
400MHz
–
–
12.0
mmho
Functional Characteristics
Noise Figure
NF
100MHz
V
DS
= 15V, I
D
= 5mA,
R
G
= 1k
–
–
2.0
dB
400MHz
–
–
4.0
dB
Common Source Power Gain
G
ps
100MHz
V
DS
= 15V, I
D
= 5mA,
R
G
= 1k
18
–
–
dB
400MHz
10
–
–
dB
Output Susceptance
I
M
(Yos)
100MHz
V
DS
= 15V, V
GS
= 0
–
–
1000
μ
mhos
400MHz
–
–
4000
μ
mhos
Note 1. tp = 100ms, Duty Cycle = 10%.
相关PDF资料 |
PDF描述 |
|---|---|
| NTE313 | Silicon NPN Transistor High Gain, Low Noise, VHF Mixer and VHF/RF Amp |
| NTE314 | Silicon Controlled Rectifier (SCR) Power Regulator Switch |
| NTE315 | Silicon NPN Transistor, Medium Power Amp |
| NTE316 | Silicon NPN Transistor High Gain, Low Noise Amp |
| NTE317 | Silicon NPN Transistor RF Power Output |
相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE312 | 制造商:NTE Electronics 功能描述:N CHANNEL JFET, -30V, TO-92 |
| NTE3120 | 制造商:NTE Electronics 功能描述:NPN-SI PHOTOTRANSISTOR 制造商:NTE Electronics 功能描述:Phototransistor Chip Silicon NPN Transistor 800nm 2-Pin |
| NTE3122 | 制造商:NTE Electronics 功能描述:PHOTOTRANSISTOR DETECTOR NPN SILICON DARLINGTON 35V ID=10UA |
| NTE3123 | 制造商:NTE Electronics 功能描述:Phototransistor IR Chip Silicon NPN Darlington 860nm 2-Pin |
| NTE313 | 制造商:NTE Electronics 功能描述:T-NPN- SI-VHF TUNER AMP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 30V 0.02A 3-Pin |
发布紧急采购，3分钟左右您将得到回复。