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| 型号： | NTE4153NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 915MA SC-89 |
| 产品目录绘图： | MOSFET SC-89 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 915mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 230 毫欧 @ 600mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.1V @ 250µA |
| 闸电荷(Qg) @ Vgs： | 1.82nC @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 110pF @ 16V |
| 功率 - 最大： | 300mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-89，SOT-490 |
| 供应商设备封装： | SC-89-3 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTE4153NT1GOSDKR |
NTA4153N, NTE4153N
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain?to?Source Breakdown Voltage
Drain?to?Source Breakdown Voltage
V (BR)DSS
V (BR)DSS /T J
V GS = 0 V, I D = 250 m A
20
26
18.4
V
mV/ ° C
Temperature Coefficient
Zero Gate Voltage Drain Current
Gate?to?Source Leakage Current
I DSS
I GSS
V GS = 0 V, V DS = 16 V
V DS = 0 V, V GS = ± 4.5 V
100
± 1.0
nA
m A
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
V GS(TH)
V GS = V DS , I D = 250 m A
0.45
0.76
1.1
V
Negative Threshold Temperature
V GS(TH) /T J
?2.15
mV/ ° C
Coefficient
Drain?to?Source On Resistance
R DS(on)
V GS = 4.5 V, I D = 600 mA
127
230
m W
V GS = 2.5 V, I D = 500 mA
V GS = 1.8 V, I D = 350 mA
V GS = 1.5 V, I D = 40 mA
170
242
500
275
700
9500
Forward Transconductance
g FS
V DS = 10 V, I D = 400 mA
1.4
S
CHARGES AND CAPACITANCES
Input Capacitance
C ISS
110
pF
Output Capacitance
Reverse Transfer Capacitance
C OSS
C RSS
V GS = 0 V, f = 1.0 MHz,
V DS = 16 V
16
12
Total Gate Charge
Q G(TOT)
1.82
nC
Threshold Gate Charge
Gate?to?Source Charge
Gate?to?Drain Charge
Q G(TH)
Q GS
Q GD
V GS = 4.5 V, V DS = 10 V,
I D = 0.2 A
0.2
0.3
0.42
SWITCHING CHARACTERISTICS (Note 3)
Turn?On Delay Time
t d(ON)
3.7
ns
Rise Time
Turn?Off Delay Time
Fall Time
t r
t d(OFF)
t f
V GS = 4.5 V, V DD = 10 V,
I D = 0.2 A, R G = 10 W
4.4
25
7.6
DRAIN?SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V SD
V GS = 0 V,
T J = 25 ° C
0.67
1.1
V
I S = 200 mA
T J = 125 ° C
0.54
2. Pulse Test: pulse width ≤ 300 m s, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Marking
Device
NTA4153NT1
NTA4153NT1G
(XX)
TR
TR
Package
SC?75 / SOT?416
SC?75 / SOT?416
Shipping ?
3000/Tape & Reel
3000/Tape & Reel
(Pb?Free)
NTE4153NT1G
TP
SC?89
3000/Tape & Reel
(Pb?Free)
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
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