参数资料
型号: NTE4153NT1G
厂商: ON Semiconductor
文件页数: 3/6页
文件大小: 0K
描述: MOSFET N-CH 20V 915MA SC-89
产品目录绘图: MOSFET SC-89 Pkg
标准包装: 10
FET 型: MOSFET N 通道,金属氧化物
FET 特点: 逻辑电平门
漏极至源极电压(Vdss): 20V
电流 - 连续漏极(Id) @ 25° C: 915mA
开态Rds(最大)@ Id, Vgs @ 25° C: 230 毫欧 @ 600mA,4.5V
Id 时的 Vgs(th)(最大): 1.1V @ 250µA
闸电荷(Qg) @ Vgs: 1.82nC @ 4.5V
输入电容 (Ciss) @ Vds: 110pF @ 16V
功率 - 最大: 300mW
安装类型: 表面贴装
封装/外壳: SC-89,SOT-490
供应商设备封装: SC-89-3
包装: 标准包装
产品目录页面: 1558 (CN2011-ZH PDF)
其它名称: NTE4153NT1GOSDKR
NTA4153N, NTE4153N
TYPICAL ELECTRICAL CHARACTERISTICS
1.2
1.0
2.0 V
1.2
1.0
V DS w 10 V
V GS = 2.6 V to 5.0 V
0.8
0.8
0.6
1.8 V
0.6
0.4
0.2
1.6 V
0.4
0.2
T J = 125 ° C
T J = 25 ° C
0
0
0.5
1.0
1.5
2.0
2.5
3.0
1.4 V
3.5
4.0
0
0
0.4
0.8
1.2
T J = ?55 ° C
1.6
2.0
0.4
0.3
V DS , DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 1. On?Region Characteristics
V GS = 4.5 V
0.4
0.3
V GS , GATE?TO?SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
V GS = 2.5 V
T J = 125 ° C
0.2
T J = 125 ° C
0.2
T J = 25 ° C
0.1
0
T J = 25 ° C
T J = ?55 ° C
0.1
0
T J = ?55 ° C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
I D, DRAIN CURRENT (AMPS)
Figure 3. On?Resistance vs. Drain Current and
Temperature
I D, DRAIN CURRENT (AMPS)
Figure 4. On?Resistance vs. Drain Current and
Temperature
1.6
1.4
I D = 0.35 A
V GS = 4.5 V
200
160
T J = 25 ° C
V GS = 0 V
C ISS
1.2
1.0
120
80
0.8
40
C OSS
0.6
?50
?25
0
25
50
75
100
125
150
0
0
C RSS
4
8
12
16
20
T J , JUNCTION TEMPERATURE ( ° C)
Figure 5. On?Resistance Variation with
Temperature
http://onsemi.com
3
DRAIN?TO?SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
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