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参数资料
| 型号： | NTE5466 |
| 厂商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Controlled Rectifier (SCR) 10 Amp |
| 中文描述： | 可控硅（晶闸管）10安培 |
| 文件页数： | 2/2页 |
| 文件大小： | 20K |
| 代理商： | NTE5466 |
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
mA
Peak Forward or Reverse Blocking
Current
I
DRM
,
I
RRM
Rated V
DRM
or V
RRM
T
C
= +25
°
C
T
C
= +100
°
C
–
–
10
–
–
2
Instantaneous On
–
State Voltage
V
T
I
TM
= 30A
(Peak)
, Pulse Width
≤
1ms,
Duty Cycle
≤
2%
V
D
= 12V, R
L
= 30
V
D
= 12V, R
L
= 30
Gate Open, V
D
= 12V, I
T
= 150mA
V
D
= Rated V
DRM
, I
TM
= 2A, I
GR
= 80mA
V
D
= V
DRM
, I
TM
= 2A, Pulse Width = 50
μ
s,
dv/dt = 200V/
μ
s, di/dt = 10A/
μ
s,
T
C
= +75
°
C
V
D
= Rated V
DRM
, Exponential Rise,
T
C
= +100
°
C
–
1.7
2.0
V
Gate Trigger Current (Continuous DC)
I
GT
V
GT
I
H
t
gt
t
q
–
8
15
mA
Gate Trigger Voltage (Continuous DC)
–
0.9
1.5
V
Holding Current
–
10
20
mA
μ
s
μ
s
Gate Controlled Turn
–
On Time
–
1.6
–
Circuit Commutated Turn
–
Off Time
–
25
–
Critical Rate
–
of
–
Rise of Off
–
State
Voltage
dv/dt
–
100
–
V/
μ
s
.250 (6.35)
Max
.500
(12.7)
Max
.500
(12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Cathode
.100 (2.54)
Anode
Gate
.147 (3.75)
Dia Max
Anode
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTE5468 | 制造商:NTE Electronics 功能描述:SILICON CONTROLLED RECTIFIER- 800VRM 10A TO-220 IGT=15MA 制造商:NTE Electronics 功能描述:SCR THYRISTOR 10A 800V TO-220 制造商:NTE Electronics 功能描述:SCR 800V 10A TO-220 制造商:NTE Electronics 功能描述:SCR THYRISTOR, 10A, 800V, TO-220; Peak Repetitive Off-State Voltage, Vdrm:800V; Gate Trigger Current Max, Igt:15mA; On State RMS Current IT(rms):10A; Peak Non Rep Surge Current Itsm 50Hz:100A; Holding Current Max Ih:20mA ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Thyristor SCR 800V 100A 3-Pin(3+Tab) TO-220 |
| NTE5470 | 制造商:NTE Electronics 功能描述: |
| NTE5471 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| NTE5472 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
| NTE5473 | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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